Abstract
The irradiation of silicon nanowires with Ar+ ions with an energy of 250 keV and fluences from 1013 cm^-2 to 10^16 cm^-2 was carried out. The dependence of the destruction of the structure under the action of ion irradiation on the fluence is investigated by the Raman spectroscopy. It is shown that the amorphization of porous silicon occurs at higher dpa values than in thin silicon thin films.
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