Исследования радиационной стойкости гетероструктурных кремниевых солнечных элементов

Abstract

The radiation resistance of different types of heterostructural silicon solar cells under irradiation with 1 MeV electrons in the fluence range 2.5•1014 - 1•1015 cm-2 has been studied. Studies have shown that the smallest degradation of the“saturation” currents of the diffusion current flow mechanism from J0d ≤ 5 10-13 to J0d ≤ 3 10-12 A/cm2 and efficiency from 19.2 to 13.6% (AM0, 1367W/m2) were n-α-Si:H/c-p(Ga)/p-α-Si:H and n-µc-Si:H/c-p(Ga)/p-α-Si:H. The results obtained make it possible to evaluate the prospects for the use of heterostructure silicon solar cells for low-orbit spacecraft.