Подложки с алмазным теплоотводом для эпитаксиального роста GaN

Abstract

Silicon wafers with a polycrystalline diamond heat sink were fabricated; silicon and diamond layers were 300 nm and 250 µm thick, respectively. The thermal conductivity of the diamond was 1290 ± 190 W / m • K. Nitride heterostructures with a two-dimensional electron gas on silicon substrates with a polycrystalline diamond heat sink were grown by ammonia molecular beam epitaxy. Carrier mobility in two-dimensional electron gas and sheet resistance were 1400 cm2 /V•s of 300 Ω/□, respectively.