Abstract
The effect of transition processes arising in the growth chamber of the molecular beam epitaxy unit on the interfaces structure and electronic spectrum of GaAs /AlxGa1-xAs quantum wells used for MID IR photodetectors was investigated. It is shown that such processes lead to (1) low-frequency shift of the photosensitivity spectrum; (2) reduction of energy shift between the fundamental and first excited hole levels in quantum wells; (3) the appearance of the symmetry forbidden transition in the absorption spectra. These effects provide a simple approach for non-destructive assessment of the interfaces quality in GaAs/AlxGa1-xAs heterostructures for MID IR photodetectors.
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