Abstract
A method for determining the p-n junction band gap from photocurrent quantum yield spectrum is proposed and substantiated in the work. The method has been applied to Ga(1-x)In(x)As p-n junctions grown by metal-organic vapor-phase epitaxy grown on metamorphic buffers. The difference between the band gap determined by the method and the electroluminescence spectrum maximum position did not exceed 3 meV. It is shown that the method can be used to determine the relationship between the band gap and the saturation current of Ga(1-x)In (a)As p-n junctions.
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