Повышение эффективности фильтрации прорастающих дислокаций в темплейтах AlN/c-Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=- с фасетированной морфологией поверхности во время их роста методом молекулярно-пучковой эпитаксии

Abstract

The results of transmission electron microscopy study and X-ray diffraction analysis of AlN/c Al2O3 templates with GaN ultrathin insertions grown by plasma-assisted molecular beam epitaxy are presented. It is shown that AlN buffer layers with faceted surface morphology provide a much higher threading dislocations density reduction then with smooth layers. The filtering action of ultrathin GaN insertions is confirmed.