Abstract
AbstractWe have synthesized oxygen-doped graphite-like carbon nitride (g-C_3N_4) by the thermal treatment of the thiourea at 450–550°C. With an increase in the annealing temperature, the oxygen concentration in g-C_3N_4 increases, and the band-gap of the material decreases from 2.64 to 2.47 eV. The semiconductor properties of g-C_3N_4 doped with oxygen are confirmed by its high photocatalytic activity, determined by decoloration of a Rhodamine B aqueous solution in the presence of g-C_3N_4 upon irradiation with visible light.
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