Abstract
For the first time, polycrystalline silicon (poly-Si) was obtained as a result of the gold-induced crystallization of amorphous silicon suboxide (a-SiOx). It is shown that, during annealing of a sample with a “substrate/gold thin film/a-SiO0.2 thin film” structure at 335 ℃, poly-Si is formed in a bottom layer (on the substrate), while gold diffuses into the upper layer. With an increase in the temperature to 370 ℃, the mechanism of poly-Si formation remains unchanged, however, only the rate of the crystallization process increases. Apparently, the process of poly-Si formation proceeds through the formation of gold silicides, which almost completely decompose into crystalline phases of gold and silicon at 370 ℃ for 10 h.
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