Abstract
AbstractThe processes of the formation and annealing of V_ n O_ m ( n , m ≥ 2) vacancy–oxygen complexes in Czochralski silicon crystals irradiated with fast electrons and reactor neutrons have been studied by infrared absorption Fourier spectroscopy. A number of arguments are presented in favor of identification of absorption bands at 829.3 and 844.2 cm^–1 as being related to local vibrational modes of V_2O_2 and V_3O_2 complexes, respectively.
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