Исследование свойств солнечных элементов на основе селективного контакта MoO-=SUB=-x-=/SUB=-/Si с помощью спектроскопии полной проводимости

Abstract

The possibility of using admittance spectroscopy to characterization the quality of ITO/MoOx/n-Si structures is shown. It has been demonstrated that magnetron sputtering of ITO layer at room temperature leads to radiation defects formation in the near-surface region of Si near the MoOx/Si interface with a depth of 0.13 and 0.26 eV below the conduction band with a capture cross-sectional area of (1–5)∙10^-19 and (5–10)∙10^-19 cm^-2, respectively. An increase in the deposition temperature of the ITO layer to 130 °C allows to reduce the concentration below the sensitivity leading to a significant improvement of solar cells characteristic.