Abstract
The results are presented for investigation of electrical conductivity of nanocrystalline diamond (NCD) films with thickness of 0.5-0.6 microns grown on silicon Si(100) substrate by CVD method using methane-hydrogen and methane-hydrogen-oxygen mixtures. By method of heating in vacuum with use of hydrogen analyzer AB-1 the concentration of hydrogen in the studied films was determined and the relationship between the content of hydrogen in the NCD film and its conductivity was estimated. It was shown that high-temperature processing in vacuum at temperature 6000 C leads to desorbtion of hydrogen from the films and a significant increase in their resistance.
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