Abstract
The process of thermal oxidation of porous silicon photonic crystals by laser treatment has been studied experimentally and theoretically. The temperature of laser heating was calculated by solving of the non-stationary thermal conductivity equation. The degree of silicon oxidation was estimated experimentally by measuring the spectral shift of the reflection curve of photonic crystals. We demonstrate the controllable shift of the photonic band gap of porous silicon photonic crystals made by means of laser irradiation.
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