Abstract
Straintronic principle of nonvolatile magnetoelectric random access memory (MELRAM) draws much attention due to the prospects of ultra-low energy consumption in storage devices. The switching of magnetic moments by pulsed deformation of elastically coupled magnetic and piezoelectric subsystems is accompanied by excitation of acoustic oscillations in the memory cells. Oscillation period in nanoscale cells is comparable with the magnetic moment switching time, which can affect the information recording process. In the present paper the influence of acoustic excitations on the magnetic switching dynamics is studied by numerical modeling with application to a magnetostrictive cell 50×50×400 nm3 on a PMN-PT <011> substrate. Parameters of voltage control pulses that can insure reliable switching of magnetic states of the system are determined.
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