Изучение влияния легирования никелем кремниевых солнечных элементов с глубоким p-n-переходом

Abstract

It is shown that doping front side of solar cell with deep-lying p-n junction with nickel atoms leads to significant increase in Jsc – 89 % and Voc - 19.7 %. Additional heat treatment at 700 ° C for one hour leads to an increase in Jsc – 98,4 % and Voc - 13,18 %. Growth in efficiency of conversion of infrared radiation is occurs due to formation of clusters of nickel atoms, which are getter centers for uncontrolled recombination impurities.