Abstract
The current-voltage characteristics and photoelectric properties of semiconductor structures containing Pd nanoparticles in thin films synthesized by the sol-gel method on an n-InP substrate have been investigated. The experimental results show that in presence of hydrogen the cut-off voltage changes. The photovoltage and photocurrent upon illumination of the structure with an LED (λ = 0.9 μm) and pulsed exposure to hydrogen change, that was observed earlier for hydrogen-sensitive Pd/n-InP Schottky diodes. The prospects of using the structures under study as a sensitive element for hydrogen sensor are discussed.
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