Влияние единичного граничного ловушечного заряда на подпороговый ток стока FinFET-транзистора с различной формой канала

Abstract

The influence of the FinFET channel shape to the RTN amplitude induced by single charge trapped at interface is simulated. The transistors with both rectangle and trapeze channel cross section are considered. It is shown, single charge trapping at the channel top induce lower RTN amplitude in trapeze than in rectangle channel cross section in the subthreshold region. However, the single charge trapping at side wall of the channel induce essentially higher RTN amplitude in trapeze cross section of the channel.