Abstract
The analysis of internal optical loss and internal quantum efficiency in 1.3 μm-range InAlGaAsP/AlGaAs a composite n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction obtained in the frame of molecular-beam epitaxy and wafer fusion technology. The level of internal optical losses in the lasers under study was varied by depositing a dielectric layer on the surface of the output mirror. It is shown that it is possible in principle to achieve low internal optical loss of less than 0.08% and 0.14% per one pass (round-trip) at temperatures of 20°С and 90°С, respectively.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.