Abstract
Gate bias stress can change the threshold voltage of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT). Especially, short-term degradation of threshold voltage should be compensated since it causes motion artifacts in the display. Therefore, a new short-term degradation model was proposed based on the stretched-exponential model. Moreover, the accuracy of the proposed model was confirmed by calculating the coefficient of determination between the measured data and the fitted data.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: The transactions of The Korean Institute of Electrical Engineers
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
