Abstract
The issues of the formation and migration of molten zones during the electric explosion of thin aluminum films on the oxidized silicon surface are considered. A difference was found in the mechanisms of formation and migration of melted zones on the surface during the passage of the current pulse and after it was turned off. It was revealed that after the current pulse is switched off, the migration of molten zones is determined by the temperature gradient near a local heat source. The temperature gradients were obtained from the size dependence of the displacement velocity and the coefficient of thermoelasticity was estimated, which determines the dynamics of zone migration in the temperature gradient field.
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