Abstract
In the study of doped anisotypic heterostructures with layers of Ga(1-x)In(x)P(1-y)As(y) grown on InP substrates with a buffer layer of InP by MOC-hydride epitaxy, the presence of transition regions was detected in the Ga(1-x)In(x)P(1-y)As(y) layer on the substrate side for individual samples, across which the arsenic content (y) increased from the interface with the InP layer to the surface of the structure by the amount of (Δy) up to 0.15, and the content of elements of the third group (x) remained constant.
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