Оптические свойства, зонная структура и проводимость межфазной границы раздела гетероструктуры 3C-SiC(111)/Si(111), выращенной методом замещения атомов

Abstract

Spectral ellipsometry in the photon energy range 0.5–9.3 eV was used to study epitaxial films of single-crystal silicon carbide of a cubic polytype 3C-SiC of 20–120 nm grown from silicon Si by atom substitution method. It was found that at the 3C-SiC (111) / Si (111) interface a thin intermediate layer is formed with a dielectric function corresponding to semimetal. This result is confirmed by quantum chemical modeling of the properties of the 3C-SiC (111) / Si (111) interface. It was shown that the conductivity of the layer is associated with p-electrons of Si atoms of SiC at the interface of the phases which are as far as possible from the Si atoms of the substrate.