Abstract
The effect of the donor impurity concentration and the lifetime of charge carriers in a crystalline silicon substrate on the maximum power of heterojunction thin-film solar cells is studied. The model used in the calculations takes into account the features of photocurrent generation under conditions of medium or high levels of injection of charge carriers at an arbitrary ratio between the diffusion length and the thickness of the semiconductor wafer. The proposed technique makes it possible, with sufficient accuracy for practical purposes, to calculate the permissible variation limits of the substrate parameters, which ensure the specified values of the performance characteristics of photoelectric converters.
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