Abstract
Gallium nitride heterostructures were grown on silicon substrates by metalorganic chemical vapour deposition. Substrate plastic deformations that occur during the growth process with the effective compressive stresses accumulation in the film were observed at temperatures of 930oC-975oC. An approach of silicon controlled plastic deformation by high-temperature annealing combined with the in situ SiNx layer growth after heterostructure epitaxy is proposed. This approach would simplify optimization of the gallium nitride heterostructures architecture for various technological tasks.
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