Влияние фтора на плотность состояний на границе раздела анодный оксидный слой/In-=SUB=-0.53-=/SUB=-Ga-=SUB=-0.47-=/SUB=-As

Abstract

It is shown that the fluorine-containing anodic layers on the n-In0.53Ga0.47As surface, in contrast to the anodic layers without fluorine, form a SiO2/InGaAs interface with an unpinned Fermi level, the state density on which decreases during annealing at a temperature of 300 °C to values (2-4) 1011 and (4-5) 1012 eV-1cm-2 near conduction band bottom and the band gap middle, respectively. An increase in the annealing temperature leads to a reverse increase in the state density (350 ºС) and pinning of the Fermi level (400 ºС).