Abstract
An anomaly arising in photovoltaic characteristics at ultra-high concentrations (more than 2000 suns) in triple-junction GaInP/GaAs/Ge and in the double-junction GaInP/GaAs solar cells has been studied. The light IV-curves at different sun concentrations and dependence of open circuit voltage on photogenerated current have been analyzed. It is shown that the anomaly is caused by the photovoltaic effect source, counteracting the subcells. The reason for this effect – absorption of photons intended for GaAs subcell in the tunnel diode located between GaInP and GaAs sub-cells.
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