Abstract
The design and technology of manufacturing of high-power Schottky barrier UHF-photodiodes with microstrip contacts made on the basis of InAlAs/InGaAs heterostructures have been developed. The operation frequency of 15-micron diameter photodiodes is greater than 25 GHz, while the maximum attainable output UHF power exceeds 50 mW at a frequency of 20 GHz. This allows one to utilize these photodiodes in analog fiber-optic UHF signal transmission lines as well as for generation and processing of UHF signals by optical techniques in radar systems and UHF measurement and instrumentation.
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