Abstract
AbstractThe photostimulated adsorption of glucose oxidase (GOx) on the surface of single-crystalline Si wafers with an amorphous silicon (a-Si) layer was examined. Estimation of the difference between the surface coverage by GOx molecules deposited under illumination and in the dark showed that this value increased for the structures with a-Si layer by a factor of 2.5 in the case of n -Si and by a factor of 1.5 in the case of p -Si. It is revealed that the n -Si/a-Si structures can be used for preliminary photostimulation of the GOx adsorption process.
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