Abstract
It is concluded that oxidation of porous silicon in an air atmosphere at 300 ° C or in an aqueous solution of nitric acid (50 vol.%) can drastically improve the filling of pores by indium during its subsequent electrochemical deposition. Due to the oxidation of the porous skeleton’s topmost areas, the maximum concentration of indium is shifted from the surface deeper into the pore channels. This effect is especially apparent in the case of oxidation via nitric acid, whereat the maximum relative concentration of indium inside the pores is achieved.
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