Abstract
The features of current processes in silicon heterojunction thin-film solar cells are investigated. The proposed model takes into account the ambipolar nature of the motion of charge carriers and allows one to calculate the operating characteristics for an arbitrary ratio between the diffusion length and the thickness of the crystalline substrate. A numerical method for estimating the rate of recombination losses on the surfaces of silicon wafers is described, based on a comparative analysis of the experimental values of short-circuit currents and open circuit voltages.
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