Создание антиотражающего покрытия для оптического диапазона на основе слоя нанопористого германия, сформированного имплантацией ионами индия

Abstract

The possibility of using a nanoporous Ge layer formed by implantation with 115 In+ ions on a monocrystal c-Ge substrate as an antireflection optical coating (In:PGe) was studied. For this purpose, ion implantation of c-Ge wafers was performed at an energy E = 30 keV, current density in the ion beam J = 5 μA/cm2, and dose D = 1.8 × 1016 ion/cm2. It was shown that the obtained In:PGe spongy layer, which consists of intertwining Ge nanowires, is characterized by a low reflectivity (~5%) in a wide optical spectral range of 250–1050 nm.