Abstract
AbstractX-ray diffraction (XRD) in asymmetric Bragg geometry was measured and XRD intensity distribution maps in the reciprocal space were constructed for GaN epitaxial layers with various degrees of structural perfection grown on c -sapphire substrates. It is established that equal-intensity lines (isolines) related to a regular system of perpendicular rectilinear threading dislocations are extended in a direction parallel to the surface. For a more chaotic distribution of dislocations with a large fraction of horizontal fragments, these isolines are rotated toward a direction perpendicular to the reciprocal lattice vector, although they still not attain a limiting position characteristic of the ideal mosaic crystal.
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