Abstract
The hole transport in chromium-compensated gallium arsenide (HR-GaAs:Cr) sensors is studied using the transient current technique and numerical simulation of the photoresponse of an HR-GaAs:Cr sensor to a single pulse of infrared radiation. The object of research were HR-GaAs:Cr sensors with a grid metal contact to which a positive potential was applied. It has been established that when the sensor is irradiated from the grid anode, electron drift in the horizontal direction to the sensor strips is observed, leading to the formation of a photocurrent pulse with a duration of less than 1 ns in the electrical circuit. It has been established that the observed areas of exponential decay of the photocurrent at the trailing edge of the pulses are due to the drift of holes towards the cathode of the sensor accompanied by capture by negatively charged chromium centers. Based on the results obtained, the lifetime of holes in the samples under study was determined.
Published Version
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