Single-crystal n-Si(100) wafers are implanted with 64Zn+ ions with an energy of 50 keV and dose of 5 × 1016 cm–2. Then the samples are irradiated with 132Xe26+ ions with an energy of 167 MeV in the range of fluences from 1 × 1012 to 5 × 1014 cm–2. The surface and cross section of the samples are visualized by scanning electron microscopy and transmission electron microscopy. The distribution of implanted Zn atoms is studied by time-of-flight secondary-ion mass spectrometry. After irradiation with Xe, surface pores and clusters consisting of a Zn–ZnO mixture are observed at the sample surface. In the amorphized subsurface Si layer, zinc and zinc-oxide phases are detected. After irradiation with Xe with a fluence of 5 × 1014 cm–2, no zinc or zinc-oxide clusters are detected in the samples by the methods used in the study.