Pure ADP and TGS doped ADP crystals were grown successfully in aqueous solution using the conventional slow evaporation technique. The structural characteristics of the grown crystals were examined by power X-ray diffraction spectroscopy. The results confirm that the samples were single crystalline with some additional planes when adding TGS dopant in the solution. Also, the results from the FT-IR show the presence of TGS in the grown ADP crystal. However, the addition of TGS did not show a strong influence on the dielectric nor the ferroelectric properties of the TGS doped ADP. Higher concentrations of TGS may be needed to improve both the dielectricity and ferroelectricity properties of ADP single crystals.