X-ray Photoelectron Spectroscopy Depth Profiling Research Articles

XPS Depth-Profiling Studies of Chlorophyll Binding to Poly(cysteine methacrylate) Scaffolds in Pigment-Polymer Antenna Complexes Using a Gas Cluster Ion Source.

X-ray photoelectron spectroscopy (XPS) depth-profiling with an argon gas cluster ion source (GCIS) was used to characterize the spatial distribution of chlorophyll a (Chl) within a poly(cysteine methacrylate) (PCysMA) brush grown by surface-initiated atom-transfer radical polymerization (ATRP) from a planar surface. The organization of Chl is controlled by adjusting the brush grafting density and polymerization time. For dense brushes, the C, N, S elemental composition remains constant throughout the 36 nm brush layer until the underlying gold substrate is approached. However, for either reduced density brushes (mean thickness ∼20 nm) or mushrooms grown with reduced grafting densities (mean thickness 6-9 nm), elemental intensities decrease continuously throughout the brush layer, because photoelectrons are less strongly attenuated for such systems. For all brushes, the fraction of positively charged nitrogen atoms (N+/N0) decreases with increasing depth. Chl binding causes a marked reduction in N+/N0 within the brushes and produces a new feature at 398.1 eV in the N1s core-line spectrum assigned to tetrapyrrole ring nitrogen atoms coordinated to Zn2+. For all grafting densities, the N/S atomic ratio remains approximately constant as a function of brush depth, which indicates a uniform distribution of Chl throughout the brush layer. However, a larger fraction of repeat units bound to Chl is observed at lower grafting densities, reflecting a progressive reduction in steric congestion that enables more uniform distribution of the bulky Chl units throughout the brush layer. In summary, XPS depth-profiling using a GCIS is a powerful tool for characterization of these complex materials.

Material screening for future diffusion barriers in Cu interconnects: Modeling of binary and ternary metal alloys and detailed analysis of their barrier performance

One of the challenges in the semiconductor industry is to find new barrier materials and copper (Cu) alternative solutions in interconnects. In this work, we focused to find alternative diffusion barrier materials. Different binary (CoMo, CoRu, CoTa, CoW, MoRu, RuTa, RuW) and ternary (CoMoTa, CoRuTa, MoRuTa) metal alloys were evaluated theoretically with the Miedema model to find the amorphous phase composition range. Afterward, thin films of the alloys with various compositions were deposited by magnetron sputtering and theoretical values were compared to the experimental results. From the experimental measurements, which included grazing incidence x-ray diffraction analysis and resistivity measurements, suitable binary and ternary alloys were chosen for diffusion analysis. By annealing thin film stacks at temperatures ranging from 500 to 675°C, diffusion was induced and detected by x-ray photoelectron spectroscopy depth profiles. Seventeen alloys were evaluated by their diffusion barrier effectiveness, and five of those, which include Ru60Ta40, Ru45W55, Mo47Ru53, Mo36Ru50Ta14, and Co40Mo35Ta25, showed excellent barrier properties against copper diffusion. Furthermore, all of the stated materials have a lower resistivity than TaN. Last, the adhesion of the best performing alloys to SiCOH and Cu was evaluated by the modified edge lift-off test. Only Ru45W55 had reasonable adhesion at both interfaces. The other materials showed low adhesion strength to Cu, which would make an adhesion promoter (liner), such as cobalt, necessary for the integration.

Oxidative corrosion resistance of a CrxFeyNi1-x-y composition spread alloy film (CSAF) in dry air

Composition Spread Alloy Films (CSAFs) were used to study the resistance to oxidative corrosion of CrxFeyNi1-x-y alloys in dry air and determine the critical Cr composition, xCr∗, necessary to prevent bulk oxidation. CrxFeyNi1-x-y CSAFs were made using physical vapor deposition (PVD) and then oxidized in dry air between 100 – 500 °C for periods of 1 h. A sharp passivation boundary was observed at 300 °C separating alloys showing evidence of heavy oxidation from Cr-rich alloys that were passivated. X-ray photoelectron spectroscopy (XPS) depth profiling was used to measure the extent of oxidation and penetration depth of the oxide layer on either side of the passivation boundary. XPS measurements confirmed the presence of a critical Cr composition, xCr∗, ranging from 18 to 26 at.%. For alloys with xCr≥xCr∗, a sufficiently thick passivating layer of oxidized Cr, Cr(ox), had formed on the top surface preventing the oxidative corrosion of either Fe or Ni. On the other hand, when xCr<xCr∗, bulk oxidation was observed, with appreciable Fe(ox) and/or Ni(ox) measured on the surface and often penetrating through the entire alloy film thickness. The trajectory of xCr∗ plotted within CrxFeyNi1-x-y composition space supports the trend towards using higher Cr-content stainless steel grades in harsh oxidative environments.

Deterioration of Li-doped phenanthroline-based charge generation layer for tandem organic light-emitting diodes

Understanding the deterioration of the charge generation layer (CGL) is an uprising issue for efficient and stable tandem organic light-emitting diodes. Here, we comprehensively investigated the change in the electrical characteristics of Li-doped CGLs according to different stress conditions and compared the stability of Li diffusion in two phenanthroline-based electron transport materials. Through current density–voltage and capacitance-frequency measurements, it was revealed that electrical stress and thermal stress affect CGL’s electrical properties differently. Moreover, the exponential trap distribution model analysis informed that the Li diffusion is expedited toward narrowing depletion width in the CGL. Diffusion of Li and thermal effect to the diffusion was experimentally observed by X-ray photoelectron spectroscopy (XPS) depth profiling. We also evaluated variations in the operating voltage of tandem devices that differed only in nCGL. Overall, Li diffusion occurs more favorably in sparse Bphen film with weak binding energy rather than closely packed BPPB film with strong binding energy, which highlights that atomic geometry and morphological characteristics are crucial for the stability of tandem devices.

Effect of Bias Potential on the Interface of a Solid Electrolyte and Electrode during XPS Depth Profiling Analysis.

Depth profiling is an essential method to investigate the physical and chemical properties of a solid electrolyte and electrolyte/electrode interface. In conventional depth profiling, various spectroscopic tools such as X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) are utilized to monitor the chemical states along with ion bombardment to etch a sample. Nevertheless, the ion bombardment during depth profiling results in an inevitable systematic error, i.e., the accumulation of mobile ions at the electrolyte/electrode interface, known as the ion pile-up phenomenon. Here, we propose a novel method using bias potential, the substrate-bias method, to prevent the ion pile-up phenomena during depth profiling of a solid electrolyte. When the positive bias potential is applied on the substrate (electrode), the number of accumulating ions at the electrolyte/electrode interface is significantly reduced. The in-depth XPS analysis with the biased electrode reveals not only the suppression of the ion pile-up phenomena but also the altered chemical states at the interfacial region between the electrolyte and electrode depending on the bias. The proposed substrate-bias method can be a good alternative scheme for an efficient yet precise depth profiling technique for a solid electrolyte.

In situ polymerized polydioxolane interlayer enabled dendrite-free argyrodite-based solid-state batteries

Solid-state batteries (SSBs) involving argyrodite-type sulfide electrolytes are considered as promising candidates for the state-of-art lithium-ion batteries (LIBs) due to their superior safety, energy and power density. However, the incompatibility between the argyrodite-type sulfide and lithium anode has plagued the development of the sulfide-based SSBs. Herein, we introduced a poly-dioxolane-based (PDOL) interlayer at the lithium anode, which is ring-opening polymerized via poly(acrylamide-2-methyl-1-propane-sulfonate) (PAMPS) loaded on the separator. The in-situ polymerized PDOL interlayer could match with the solvent-sensitive lithium argyrodite while enabling a stable and tight lithium interface. The symmetric lithium cell with the PDOL interlayer exhibits over-1200-hour dendrite-free lithium deposition and stripping at 0.5 mA cm-2, and the critical current density reaches 2.7 mA cm-2. The as-cycled lithium interface is further investigated via the depth-profiling X-ray photoelectron spectroscopy, and solid electrolyte interphase (SEI) is determined to be composed of ether polymer as well as inorganic compounds like LiC, Li2O, LiF, and Li2S. The Li|LiCoO2 SSB with PDOL interlayer presents a high discharge capacity of 120.7 mAh g-1 at 0.1 C and a capacity retention rate of 95.4% after 200 cycles. The rational design of the PDOL interlayer at the lithium anode opens a new alternative for high-performance SSBs.

Depth profiling of microwave nitrogen-terminated polycrystalline diamond surfaces by energy-dependent X-ray photoelectron spectroscopy

Nitrogen-terminated diamonds hold promise for stabilizing near-surface NV− centers, which is essential for reliable quantum sensing. Among various surface preparation methods, microwave (MW) nitrogen plasma, known for its minimal surface damage, appears as the most effective choice. In this investigation, we explore the nature of nitrogen bonding of polycrystalline diamond (PCD) surfaces exposed to MW nitrogen plasma using X-ray Photoelectron Spectroscopy (XPS) depth profiling and Near-Edge X-ray Absorption Fine Structure (NEXAFS) spectroscopy at the C K- and N K-edges. XPS depth profiling with atomic resolution, achieved by varying the probing photon energy using synchrotron radiation and supported by a physical model considering the associated inelastic mean free path, suggests a surface of almost fully saturated nitrogen in two main bonding configurations of similar contribution and a low coverage of ∼5 % of graphene-like islands residing atop the nitrogen-terminated diamond surface. The thermal stability of these surface groups is monitored by in situ annealing up to 700 °C. The depth profiles reveal that nitrogen atoms do not diffuse in the diamond crystal, resulting in excellent diamond crystallinity in the first atomic planes below the surface. C K-edge NEXAFS analysis reveals the position of unoccupied surface states within the diamond bandgap, opening new perspective on the stabilization of near-surface NV− centers.

Buried junction and efficient carrier separation in CdSexTe1−x/CdTe solar cells

Alloying CdTe absorbers with Se is a critical advancement for the fabrication of highly efficient CdTe thin-film solar cells. Herein, the role of the Se concentration gradient in CdSexTe1−x/CdTe solar cells is stressed in addition to the decreased bandgap and passivation effect of Se. The buried graded CdSexTe1−x at the front interface of the device was stripped and analyzed by quasi in situ x-ray photoelectron spectroscopy depth profiling. A serial shift of Fermi level toward the valence band was probed as the Se concentration decreased in the graded CdSexTe1−x absorber, revealing the presence of n-type CdSexTe1−x region near the front contact. Kelvin probe force microscopy characterizations and voltage-dependent photocurrent collection analysis further confirmed the existence of a buried junction in the graded CdSexTe1−x absorber. The CdS-free CdTe solar cell with a graded CdSexTe1−x/CdTe absorber fabricated in this study showed an efficiency of 17.6%. These results indicated that the non-uniform distribution of Se introduced a built-in field in the graded CdSexTe1−x absorber and enabled efficient separation of photogenerated carriers, yielding high-performance CdTe solar cells in the absence of a conventional n-type CdS window layer. This study deepened the understanding of the performance enhancement in Se-containing CdTe solar cells and provided new ideas for further performance optimization.

Inhibited Surface Diffusion in Nanoporous Multi-Principal Element Alloy Thin Films Prepared by Vacuum Thermal Dealloying

Nanoporous structures with 3D interconnected networks are traditionally made by dealloying a binary precursor. Certain approaches for fabricating these materials have been applied to refractory multi-principal element alloys (RMPEAs), which can be suitable candidates for high-temperature applications. In this study, nanoporous refractory multi-principal element alloys (np-RMPEAs) were fabricated from magnesium-based thin films (VMoNbTaMg) that had been prepared by magnetron sputtering. Vacuum thermal dealloying (VTD), which involves sublimation of a higher vapor pressure element, is a novel technique for synthesizing nanoporous refractory elements that are prone to oxidation. When VMoNbTaMg was heated under vacuum, a nanoporous structure was created by the sublimation of the highest vapor pressure element (Mg). X-ray photoelectron spectroscopy depth profiling indicated significantly less ligament oxidation during VTD as compared to traditional dealloying methods. Furthermore, np-RMPEAs exhibited outstanding stability against coarsening, retaining smaller ligaments (~25 nm) at elevated temperature (700 °C) for a prolonged period (48 h).

Solid–electrolyte interphase formation during Li metal deposition in LiN(SO2F)2-based solvate ionic liquids

AbstractSolvate ionic liquids (SILs) are promising electrolytes for Li metal batteries. In this study, Li plating-stripping reactions in SILs were investigated using electrochemical quartz crystal microbalance measurements and X-ray photoelectron spectroscopy (XPS). SILs were prepared by mixing Li salt and glyme (triglyme or tetraglyme) in a 1:1 molar ratio. During the Li plating-stripping reaction, a reversible mass change was observed in LiN(SO2F)2 (LiFSA) based SILs. In contrast, a considerably higher mass change than the theoretical value calculated from the Faraday current was observed in the LiN(SO2CF3)2 (LiTFSA) based SILs, owing to the accumulation of decomposition products of electrolytes on the electrode surface. XPS depth profiling for the deposited Li suggested the formation of thin solid-electrolyte interphase (SEI) in the LiFSA-based SILs while considerably thicker SEI was formed in the LiTFSA-based SILs. The SEI formed in LiFSA-based SILs effectively suppressed the decomposition of electrolytes. Thus, LiFSA-based SILs are favorable for achieving highly reversible charge–discharge of Li electrodes in Li metal batteries.

External Voltage-Induced Restructuring of the Solid-State Electrode/Electrolyte Interface Revealed by X-ray Photoelectron Spectroscopy Depth Profiling Analysis.

Solid/solid interfaces between electrodes and electrolytes play an important role in all-solid-state energy devices, while microscopic investigations of the buried interfaces remain challenging. Here, we construct metal|yttria-stabilized zirconia (YSZ)|Au model cells consisting of a metal film cathode (metal (M) = Au, Ni, and Ag), a single crystalline YSZ electrolyte, and a Au film anode, and use quasi in situ X-ray photoelectron spectroscopy depth profiling analysis to investigate the restructuring of buried interfaces between metal cathodes and YSZ. After applying 2.9 V at 500 °C, interfacial Zr4+ ions in the electrolyte are reduced and then interdiffuse with metal cathode overlayers, forming a miscible ZrM alloy interlayer. The interface restructuring degree follows the sequence of Au|YSZ|Au > Ni|YSZ|Au > Ag|YSZ|Au. Meanwhile, surface segregation of Zr on the cathode surface is also observed, whose degree follows the sequence of Ag|YSZ|Au > Ni|YSZ|Au > Au|YSZ|Au. Notably, the strong ZrM alloy formation enhances the interface restructuring but suppresses the Zr surface segregation. This work provides a fundamental understanding of the interfacial reaction at the buried electrode/electrolyte interface.

XPS depth profiling of functional materials: applications of ion beam etching techniques

X-ray photoelectron spectroscopy depth profiling combined with ion beam etching methods is a primary tool to study the chemical composition of functional materials at different scales from the surface to the bulk.

Growth mechanism and field emission of B doped AlN films

This paper highlights the effect of boron dopant on the field emission and growth mechanism of AlN films. The films have been grown by reactive RF magnetron sputtering method. For undoped films, columnar AlN structure was obtained. In the case of boron doped AlN films, the structure growth proceeded gradually through four layers of different thicknesses and structures. It was found that boron favors the formation of an amorphous layer within which oxygen and boron based precipitates develops, retarding the growth of columnar morphology. Depth profiling X-ray photoelectron spectroscopy analyses confirm the presence of B-O, B-N, Al-B and Al-O groups.The study on the field emission (FE) properties of undoped and B doped AlN films on Si substrates indicates that the addition of boron allow to improve FE properties with low turn on field of 2.6 V/μm and low threshold filed of 3.07 V/μm. Such good field emission properties can be attributed to the formation of densely nanograined surface and the appearance of boron based groups.

The effect of ramp heating on the microstructure and surface chemistry of APMT FeCrAl alloy

The APMT FeCrAl alloy is a cladding candidate for the accident-tolerant fuel (ATF) systems in light water reactors (LWRs) due to its ability to form a protective Al2O3 film on the surface at temperatures greater than 1000 °C. In order to understand the alumina evolution at the early stages of high-temperature exposure in short periods, an APMT tube specimen was heated up rapidly to melting temperature in a flowing 100 % water and steam environment. Using transmission electron microscopy (TEM), the presence of a ∼ 90 nm thick oxide layer was confirmed. The surface chemistry of APMT was characterized layer by layer using X-ray photoelectron spectroscopy (XPS) depth profiling. The results indicated a thin layer composed of oxides and hydroxides of Al, Cr, and Fe with varying proportions at different depths in the oxide layer. The microstructure of the oxide layer was characterized using X-ray diffraction and showed the presence of α-Al2O3 and γ-Fe2O3/Fe3O4 after ramp heating. The results depict the ability of the APMT FeCrAl alloy to form a protective oxide layer in less than a second on exposure to steam under high ramp rates.

In‐Depth Compositional Analysis of the Carbon‐Rich Fine‐Grain Layer in Solution‐Processed CZTSSe Films Accessed by a Photonic Lift‐Off Process

AbstractThe existence of a fine‐grain (FG) sub‐layer between the top large‐grain (LG) layer and the back contact is widely observed in kesterite absorbers prepared with organic solvents. In this paper, the distinguishing features of the lifted‐off carbon‐rich FG layer are investigated through direct analysis with a series of characterization techniques, including X‐ray photoelectron spectroscopy (XPS), attenuated total reflectance, X‐ray diffraction, and scanning electron microscopy. To access the FG layer for direct probing, a scalable and repeatable photonic lift‐off method is developed for carrying out the separation of the kesterite absorber layer from the Mo‐coated glass substrate. A very high light intensity of 4 kW cm−2 for a short interval of 1 ms is optimized by COMSOL simulations, and successful implementation is demonstrated. The XPS analysis has revealed significant carbon content at the exposed FG surface, which explains the hindrance of grain growth due to carbon abundance. The variations in cations and anions concentrations from FG layer leading into LG region are explored through argon ions (Ar+) assisted XPS depth profiling. The observed significant differences between the composition of FG and LG regions are speculated to negatively impact the performance of solar cells.

Plasma deposited amorphous silicon passivation layers on InAs surfaces

The compound semiconductors (InAs, GaSb, AlSb) having nearly matched lattice constants (≈6.1 Å) are of great interest in fabrication of infrared micro/optoelectronics, but are hampered significantly by a high density of interface states that lead to degenerately doped surface layers. Native oxides are a cause of interface states, as well as a barrier to the effective passivation of dangling bonds, and must be removed. Re-oxidation must then be prevented prior to deposition of a passivant. We demonstrate effective removal of the native oxide of InAs through utilization of an amorphous silicon plasma enhanced chemical vapor deposition process. A hydrogen-diluted silane plasma provides a reducing environment to react and remove indium and arsenic oxide species while a thin layer of amorphous silicon is grown to passivate and prevent re-oxidation of the InAs surface. The reduction of native oxide species via hydrogen-diluted argon plasma as a pretreatment prior to amorphous silicon was also explored. The surface chemistry is verified via depth profiling X-ray photoelectron spectroscopy, and the impact of a hydrogen-argon plasma pretreatment investigated to further reduce oxygen concentration at the InAs/amorphous silicon interface.

Organic Nitrate Additive for High-Rate and Large-Capacity Lithium Metal Anode in Carbonate Electrolyte.

Lithium nitrate has been widely used to improve the interfacial stability of Li metal anode in ether electrolyte. However, the low solubility limits its application in carbonate electrolytes for high-voltage Li metal batteries. Herein, nitrated polycaprolactone (PCL-ONO2 ), which is prepared via the acylation of polycaprolactone diol (PCL-diol) followed by the grafting of nitrate group, has been proposed as an electrolyte additive to introduce high-concentration NO3 - into carbonate electrolytes for the first time. The theoretical calculations and X-ray photoelectron spectroscopy depth profiling demonstrate that the PCL-ONO2 additive preferentially reacts with Li metal and in situ constructs a stable dual-layered solid electrolyte interphase film, presenting an inner nitride-rich layer and an outer flexible PCL-based layer on the surface of Li metal anode. As a result, the Li metal anode delivers an impressive long-term cycling performance over 1400h at an elevated area capacity of 10.0mAhcm-2 and an ultrahigh current density of 10.0mAcm-2 in the Li symmetrical cells. Moreover, the PCL-ONO2 additive enables the full cells constructed by coupling high-loading LiFePO4 (20.0mgcm-2 ) or LiNi0.5 Co0.2 Mn0.3 (16.5mgcm-2 ) cathode and thin Li metal anode (≈50µm) to demonstrate greatly improved cycling stability and rate capability.

Enabling Scalable Polymer Electrolyte with Dual-Reinforced Stable Interface for 4.5V Lithium-Metal Batteries.

Hitherto, it remains a great challenge to stabilize electrolyte-electrode interfaces and impede lithium dendrite proliferation in lithium-metal batteries with high-capacity nickel-rich LiNx Coy Mn1- x-y O2 (NCM) layer cathodes. Herein, a special molecular-level-designed polymer electrolyte is prepared by the copolymerization of hexafluorobutyl acrylate and methylene bisacrylamide to construct dual-reinforced stable interfaces. Verified by X-ray photoelectron spectroscopy depth profiling, there are favorable solid electrolyte interphase (SEI) layers on Li metal anodes and robust cathode electrolyte interphase (CEI) on Ni-rich cathodes. The SEI enriched in lithiophilic N-(C)3 guides the homogenous distribution of Li+ and facilitates the transport of Li+ through LiF and Li3 N, promoting uniform Li+ plating and stripping. Moreover, the CEI with antioxidative amide groups can suppress the parasitic reactions between cathode and electrolyte and the structural degradation of cathode. Meanwhile, a unique two-stage rheology-tuning UV polymerization strategy is utilized, which is quite suited for continuous electrolyte fabrication with environmental friendliness. The fabricated polymer electrolyte exhibits a high ionic conductivity of 1.01 mS cm-1 at room temperature. 4.5V NCM622//Li batteries achieve prolonged operation with a retention rate of 85.0% after 500 cycles at 0.5 C. This work provides new insights into molecular design and processibility design for polymer-based high-voltage batteries.

Structural and Luminescence Properties of Eu-Doped PMO Films with Ethylene Bridge and Methyl Terminal Groups

Eu-doped periodic mesoporous organosilicate (PMO) films with terminal methyl and ethylene bridging groups have been synthesized using sol-gel technology and spin-coating, employing evaporation-induced self-assembly (EISA), on silicon wafers. Eu doping is achieved by the dissolution of Eu(NO3)3·6H2O in the precursor solution. The deposited films are characterized using Fourier transform infrared (FTIR) spectroscopy, ellipsometric porosimetry (EP), X-ray photoelectron spectroscopy (XPS) and photoluminescence spectroscopy. It is observed that Eu doping reduces the concentration of terminal methyl groups, makes the films more hydrophilic and reduces the pore size and open porosity. The reduction reaction Eu3+ → Eu2+ occurs in the pores of organosilicate glass (OSG) films, which was confirmed by the depth profiling XPS. Eu3+ was still present on the top surface of the films. The presence of Eu3+ and Eu2+ gives luminescence emission in the range of 600–630 nm (Eu3+) and 290–400 nm (Eu2+). The Eu2+/Eu3+ concentrations ratio depends on CH3 groups concentration in the films. The concentration of Eu2+ ions in the pores can be reduced by exposure to inductively coupled (ICP) oxygen plasma. The observed shift in the luminescence spectra towards the UV region, in comparison to previously reported Eu-doped organosilicate films, can be attributed to the energy transfer occurring between the host material and Eu2+ ions.

Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power.

P-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe2 target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry within the thin films should be investigated in the depth direction to demonstrate a secondary effect on the electrical and optical properties of the thin films. Systematic characterization of the Cu-Se thin films, including the morphology, microstructure, chemical composition, and depth-directional chemical bonding state and defect structure of the thin films, revealed that the sputtering power played an important role in the homogeneity and stoichiometry of the thin films. At very low and very high sputtering power levels, the Cu-Se thin films exhibited more deviations from stoichiometry, while an optimized sputtering power resulted in more homogenous thin films with improved stoichiometry across the entire thin film thickness in the X-ray photoelectron spectroscopy depth profile, despite showing Se deficiency at all depths. A rapid decrease in carrier concentration, indicating a reduction in the net effect of total defects, was obtained at the optimized sputtering power with less deviation from stoichiometry in the Cu-Se thin films and the closest stoichiometric ratio at an intermediate depth.