The results of studying of the influence of a constant magnetic field on the dynamic behavior of dislocations in the crystalline block of an interferometer subsequently subjected to uniaxial mechanical tensile stress along the crystallographic axis of silicon are presented. The periodicity of the dilatation moire image after these influences, the average means free path of a dislocation in a crystal (block), the amount of slip, the average density of dislocations along the slip line, the relative deformation, and Young's modulus are calculated. To study the effect of a stable magnetic field on the dynamic behavior of dislocations in silicon crystals, a special three-block X-ray interferometer was fabricated in one of the blocks, and dislocations were introduced using the technique proposed by us. The experiments were carried out for various values of the magnetic field induction and mechanical stress. It is shown that the sequential action of these external influences leads to an increase in the starting stress, a decrease in the velocity of dislocation movement, a delay in the onset of dislocation movement, and the appearance of a hardening phenomenon. Experiments show that the displacement mobility characteristics are especially sensitive when the modulus of the magnetic induction vector reaches a certain threshold value for a given sample. It was shown that, in a sample containing silicon dislocations, the magnetic memory that appears after storage in a magnetic field is short-lived. It is found that the speed of movement of a dislocation in a magnetic field processed by a magnetic field, "then" subjected to mechanical stress (stretching), changes, but in practice the energy of its activation does not change. A theoretical analysis of the above experimental results is carried out, their scientific substantiation is given, all the factors associated with the phenomena observed in experiments are revealed.