Abstract The x-ray and Rutherford backscattered channeling dip curves produced by alpha particles incident on GaAs single crystals along the (110) axis have been measured over the energy range 1.0 MeV ≤ Eα ≤ 3.5 MeV. The extrapolated values of ψ1/2(x = 0) of the backscattered dip curves agree well with results calculated using the formulation suggested by J. H. Barrett. To interpret the x-ray dip curves, a single semi-empirical approach which incorporates the channeling effects at different tilt angles has been developed. The results of these calculations reproduce the experimental values quite well and suggest that the mean x-ray emission depth may change with the tilt angle from a major axis.