The influence of structural ordering of methyl cyclohexane appended naphthalene diimide (NMeCy2) thin films and their correlation with enhanced device performances are presented here. The vacuum-deposited thin-film microstructure and morphology of NMeCy2 have been investigated using thin-film X-ray diffraction (XRD), atomic force microscopy (AFM), and field emission scanning electron microscopy (FESEM) and were comparable with the bulk-phase crystalline structure and packing of NMeCy2. The organic field-effect transistor (OFET) fabricated on a glass substrate consists of a bilayer polymer dielectric poly(methyl methacrylate) (PMMA) over poly(vinyl alcohol) (PVA) and an inorganic high-k dielectric Al2O3 as the third layer. NMeCy2 thermally deposited at an optimized substrate temperature (Tsub) of 60 °C displayed excellent molecular packing over a large area that resulted in the improved field-effect performance with electron mobility (μe) value of 0.6 cm2 V–1 s–1 and current on/off ratio (Ion/off) of 106 via modifications in dielectric configuration. Furthermore, the device afforded an unprecedented threshold voltage (VTh) of 5.23 V with this material. We have been successful in developing a facile, reliable, and cheap method to tune the dielectric features which can culminate in improved field-effect transport properties.
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