Wide Emission Research Articles

Construct ZnSeTe/ZnTe Nanostructures with the Tunable Emission from 450 to 760 nm.

Developing heavy-metal-free materials with wide tunable emission is important to light-emitters. The alloying method is utilized in ZnSe magic size clusters (MSCs) with Te to form ZnSeTe and manipulate the band gap structure in ZnSe. The growth of ZnTe on alloyed ZnSeTe quantum dots (QDs) forms ZnSeTe/ZnTe core/shell nanostructures, showing the tunable photoluminescence emission peak from 450 to 760 nm with the different thicknesses of ZnTe shell. This is the record tunable range of 310 nm in the full visible and near-infrared spectra based on zinc chalcogenide nanostructures. Further coating thin ZnSe and ZnS shell on ZnSeTe/ZnTe core/shell nanostructures significantly improves the stability and quantum yield of nanoparticles. This work offers a new, cadmium-free material choice for optoelectronic devices aligning with environmental and performance requirements for modern applications.

Long-term optical spectroscopy of B[e] star CI Cam in a quiet state

High-resolution optical spectra of the B[e] star CI Cam were obtained on arbitrary dates 2002–2023 using the 6-meter BTA telescope with the echelle spectrograph NES. The variability over time of the powerful emissions of Hα and He I profiles is found. For two-peaked emissions with «rectangular» profiles, the intensity ratio of blue-shifted and red-shifted peaks is V / R ≥ 1 , except one date. A decrease in the intensity of all two-peak emissions with «rectangular» profiles was revealed as they moved away in time from the 1998 outburst. The average radial velocity for emissions of this type for all observation dates varies in the range Vr(emis – d ) = –(50.8 – 55.7) + 0.2 km/s. The half-amplitude of the change (standard deviation) is equal to ∆Vr= 2.5 km/s. The velocity for single-peaked ion emissions (Si III, Al III, Fe III) differs little from the values of Vr(emis – d ) , but the measurement accuracy for these emissions is worse: the average error for different dates ranges from 0.4 to 1.3 km/s. The systemic velocity is assumed to be Vsys = –55.4 + 0.6 km/s according to the stable position of the forbidden emission [N II] 5754 Å. The position of single-peak emissions [O III] 4959 and 5007 Å is also stable: Vr([O III]) = –54.2 + 0.4 km/s. Emissions [O I] 5577, 6300, 6363 Å, [Ca II] 7291 and 7324 Å are absent from the spectra. Appearance of the emission near 4686 Å is an infrequent event, its intensity rarely exceeds the noise level. Only a wide asymmetric emission with an intensity of about 16% above the continuum was registered in the spectrum for 03.09.2015. Questions arise about the use of this emission to estimate the period of variability of the star and about localization of this feature in the CI Cam system. The photospheric absorptions of N II, S II, and Fe III with a variable position are identified.

Reconstructive Phase Transition Enables Abnormal Negative Thermal Quenching of Photoluminescence in a 1D Hybrid Perovskite.

Organic-inorganic hybrid perovskites (OIHPs) have attracted enormous attention owing to their intriguing structural tunability and diverse functional properties. Reconstructive phase transitions, involving the breaking and reconstruction of chemical bonds, have rarely been found in such materials; however, these features may induce many intriguing physical properties in optics, ferroelectrics, ferromagnetics, and so forth. Here, we utilized the weak and switchable coordination bonds of HETMA-MnCl3 (HETMA = (2-hydroxyethyl) trimethylammonium) to construct a 1D hybrid perovskite employing a neutral framework. As expected, this compound undergoes a reconstructive phase transition with a high phase transition temperature of 421 K. HETMA-MnCl3 shows remarkable red fluorescence, a wide emission spectrum, and a long luminous lifetime. Impressively, the reconstructive phase transition of HETMA-MnCl3 dominates the excellent PL coexistence of negative thermal quenching and thermal quenching behavior. To the best of our knowledge, such a phenomenon has rarely been found in the realm of multifunctional optoelectronic materials. This work provides possibilities to explore new classes of perovskite materials with reconstructive phase transitions and contributes to further developments.

Tuning the bandgap and photoluminescence properties of Ge/Al2O3 multilayer thin films using annealing and ion beam irradiation

Abstract The present work reports high energy ion beam irradiation induced modifications in Ge/Al2O3 multilayers (MLs). Ge and Al2O3 multilayer thin films were deposited using the electron beam evaporation technique. Afterward, the as-deposited films were annealed using Rapid thermal annealing (RTA) at different temperatures ranging from 500 to 800°C under high vacuum. At a constant fluence of 5×1012 ions /cm2, the annealed films were subjected to irradiation with 80 MeV Ag ions. X-ray diffraction patterns show the crystalline nature of films that were annealed above 500°C, and the increase in crystallite size of Ge nanocrystals from 4.5 to 5.7 nm is observed for annealed samples. After Ag ion irradiation, the crystallinity of the films deteriorates. The crystallinity and optical bandgap are found to vary with Ag ion irradiation. The band gap of annealed films decreased from 1.1 to 0.97 eV with increase in crystallite size. The band gap of irradiated samples increased than that of pristine films. In addition, photoluminescence (PL) measurements were carried out to investigate the luminescence characteristics of annealed and irradiated multilayer films, and a wide emission band in the visible region was observed. The basic mechanism for tailoring the optical band gap and PL emission using RTA and ion irradiation is discussed.


Simple synthesis of AgInS2/ZnS core/shell quantum dots with wide tunable emission wavelength for white light-emitting diodes

Phosphor with efficient and broad range emission is necessary for lighting applications. I-III-VI group quantum dots (QDs) have the advantages of non-toxic composition and large adjustable spectrum range, and have potential applications in the field of lighting. However, the efficient luminescence of these QDs at shorter wavelengths still needs further study, which is crucial for the development of high color rendering index white light LED devices (WLEDs). In this work, wide visible range emitting AgInS2/ZnS QDs with broad band and high luminous efficiency were obtained by altering the Ag/In ratios and Zn2+ inter-diffusion with cation of AgInS2. Photo-luminescent (PL) wavelength range of the obtained core-shell structured AgInS2/ZnS extended from 703 nm to 524 nm with high PL quantum yield (QY) and stability. The champion device based on the optimized AgInS2/ZnS QDs exhibits warm white light (correlated color temperature = 3652 K) characteristics with high color rendering index (CRI Ra) of 92.85 while maintaining excellent color stability under different driving currents. These properties are far superior to those of WLEDs with YAG phosphor.

Fluorescence temperature dependent behaviors of Eu3+/Mn4+ co-doping cubic and hexagonal ZnO-TiO2 compounds: Application in high sensitive optical thermometers

ZnTiO3:Eu3+,Mn4+ phosphors with hexagonal and cubic structure are synthesized by solvothermal method. The structure of ZnTiO3 depends on precursors and the annealing temperature. Inverse spinel Zn2TiO4 phase reveals the highest thermostability compared with cubic ZnTiO3 and hexagonal ZnTiO3 phases. The different phases of ZnTiO3 crystals exhibit different photoluminescence properties. The forbidden transition of 4A2g→2T2g for Mn4+ is observed in Zn2TiO4 and hexagonal ZnTiO3 (h-ZnTiO3) due to the decreased symmetry. The zero photon line (ZPL) assigned to 2Eg→4A2g transition of Mn4+ is absent in all type ZnTiO3 phases. A sharp emission peak at 714 nm assigned to ν6 (Stokes emission) mode of Mn4+ in h-ZnTiO3 is present when the temperature was below 270 K, and increases sharply in intensity with the temperature decreasing. The similar PL spectra of cubic ZnTiO3 and Zn2TiO4 co-doped with Eu3+ and Mn4+ show a wide emission band composed of Stokes and anti-Stokes modes. The calculated nephelauxetic parameter increases from 0.84 to 1.03 and 1.18 for Mn4+ in h-ZnTiO3, cubic ZnTiO3 and Zn2TiO4, respectively, indicating the covalency decreasing, which causes the red shift of ZPL in h-ZnTiO3. The Mn4+ emissions show stronger temperature dependence than that of Eu3+, especially for that in h-ZnTiO3 matrix. Based on the fluorescence intensity ratio between IEu3+ and IMn4+, the highest relative temperature sensitivity of 2.46 %K−1 is observed in cubic ZnTiO3 (c-ZnTiO3) and Zn2TiO4. Under the excitation at 550 nm, the highest relative sensitivity of 2.9 %K−1 is achieved in c- and h-ZnTiO3 mixed phases.

Calcium vacancy enhanced self-reduction of Ce4+ for single-phase full-spectrum lighting and information encryption

Due to the wide and adjustable emission range, Ce3+ is an indispensable luminous center for full spectrum lighting. However, it needs to be sintered at high temperature in a reducing atmosphere, resulting in difficulty to coexisting with other multivalent activated ions (such as Eu3+, Tm3+), which greatly hinders the formation of full spectrum. In this study, a calcium vacancy enhanced self-reduction of Ce4+ is realized in CaNaSb2O6F (CNSOF) host under air atmosphere sintering, through which Ce3+, Tm3+ and Eu3+ coexisting in a single-phase full spectrum phosphor was prepared. Notably, the artificial introduction of a calcium vacancy was designed to verify this self-reduction mechanism. Moreover, the energy transfer kinetics among Tm3+, Ce3+ and Eu3+ were explored. Finally, combined with a 340 nm UV chip, a full spectrum phosphor-converted light-emitting diode (pc-LED) was fabricated, showing a broad emission range from 400 to 750 nm, Commission Internationale de I’Eclairage (CIE) of (0.3485, 0.3673), Ra of 92 and correlated color temperature (CCT) of 4933 K. Utilizing the variation in emission colors of this phosphor under different UV wavelengths, a dual encryption method combining point character code and fluorescent encryption technique is proposed. This work provides an effective path for Ce4+ self-reduction to apply in full spectrum pc-LED and information encryption.

Structure–luminescence property relationships of Yb3+-Doped Y2Mg3-xCax(SiO4)3 single crystals for 0.95–1.2 μm broadband emissions

This study successfully grew Yb3+-doped Y2Mg3-xCax(SiO4)3 (x = 0, 0.125, 0.25, 0.375, 0.5, 0.625, 0.75) (Yb: YCMS) novel single crystals with multiple disordered structures. To the best of our knowledge, this is the first systematic report on the relationship between the luminescence properties (including emission intensity, emission peak position, full width half maximum, and fluorescence lifetime) and the local structure of the luminescent ions based on first-principles calculations. The wide half-height width of emission (103.10 nm@1047 nm) have been realized on the first-grown Yb: YCMS crystals. This study provides a novel solution for designing laser crystals with tunable optical properties. The comprehensive properties of Yb3+-doped YCMS crystals, such as ultra-wide emission bandwidth and high fluorescence lifetime, are promising gain materials for ultrafast laser applications.

Mono-/multi-fluorination of 1,8-naphthalimides for developing AIE/AIEE fluorophores with tuning emission wavelength

Aggregation-induced emission/aggregation-induced emission enhancement (AIE/AIEE) luminogens provides amount of highly emissive materials in density states for versatile applications. Most of the AIE/AIEEgens were designed with the multiply rotation unit, in which the additional rotation units not only extend the molecular structure but also suffer from low atom economy. Herein, a fluorination strategy was introduced to construct ten AIE/AIEEgens with 1∼3 fluorine (F) atoms at different position of phenyl ring at previous developed AIEgen, 4-phenyl-1,8-naphthalimide, which can output tuning emissive wavelength and high quantum yields in both aqueous solutions and solids. In these compounds, five AIEgens with ortho-F atom and five AIEEgens without ortho-F atom were obtained. All compounds show bright blue emissions centered at 430–485 nm in aqueous solutions and wide emissions covering visible region in solid states. We calculated the ratio of quantum yields between their aqueous solution and THF solution (Φwater/ΦTHF). The AIE luminogens show the higher ratios between 10.19 and 24.89 and the AIEEgens show the lower ratios between 1.89 and 6.40. This strategy based on changing the substituent positions of F atoms provides an efficient and convenient method for construction of novel AIE-active materials with variable photophysical properties in density states.

Design of Anti-Hund Organic Emitters Based on Heptazine.

Hund's rule, which is powerful in governing the first excited states of closed-shell organic materials, can hardly be violated to get inverted singlet-triplet gap (INVEST) molecules with negative singlet-triplet energy gaps (ΔEST), although INVEST materials have shown extraordinary photophysical properties and promising device performance especially in light-emitting diodes. Here, we propose a facile strategy to construct emissive INVEST molecules by introducing different types of substituents to heptazine in various modes, which can effectively tune the ΔEST to be negative with the enlarged oscillator strength (f) for the high fluorescence rate of the heptazine derivatives. Systematic computational studies show that the double substitution of electron-donating units with another nonconjugated substituent in hybrid substitution mode is the most favorable way in achieving slightly negative ΔEST and large f values; the conjugated substituent will compete with heptazine to make the molecule deviate from the INVEST feature. Especially, a series of high-performance heptazine-based INVEST emitters were constructed, exhibiting ΔEST low to -0.362 eV, f up to 0.0436, as well as a wide range emission color from 339 to 716 nm. Also, the designed molecules were predicted to have fluorescence radiative rates up to 106 s-1, along with efficient reverse intersystem crossing rates reaching 108 s-1. Importantly, the figure of merit (FM) was first proposed as a parameter to wholly evaluate the performance of INVEST emitters, and the highest FM of 0.198 was found in the triazine and double nonconjugated amine-substituted heptazine. These results highlight the great potential of the heptazine chromophore in constructing INVEST emitters, revealing fundamental structure-property understandings for the material design of efficient anti-Hund organic molecules with improved emission properties.

Influence of Zinc Ion Concentration on the Structural, Surface Morphology and Optical Properties of Zinc Selenide Thin Films

ZnSe thin films were deposited on nonconducting glass substrates using different Zn[Formula: see text] ion concentrations. The films were deposited at 80[Formula: see text]C for 2.0[Formula: see text]h via photo-assisted chemical bath technique and annealed for 2.0[Formula: see text]h at 250[Formula: see text]C. X-ray diffraction revealed a hexagonal structure with preferred orientation along the (002) plane and the average crystallite size decreased from 10.5[Formula: see text]nm to 6.8[Formula: see text]nm with increased Zn[Formula: see text] ions. Raman spectra were used to confirm ZnSe phonon modes whose intensity increased with Zn[Formula: see text] ion concentrations although with fluctuation. Optical analysis showed higher absorbance and low transmittance in the visible region than near infrared making the thin films good materials for selective absorber surfaces. The band gap increased from 2.52[Formula: see text]eV to 2.78[Formula: see text]eV as the Zn[Formula: see text] ion concentration varied from 0.05% to 0.25%. The presence of the desired elements was confirmed by the EDS. Photoluminescence studies revealed three emission peaks which were all ascribed to defect state levels in ZnSe and all the samples emitted in reddish color according to CIE color chromaticity analysis. The selective absorption, wide band gap and broad emission properties suggest that the material is promising for optoelectronic applications.

Ca2HfSi4O12:Eu2+: A novel blue phosphor with excellent temperature sensitivity for temperature sensor and cathodoluminescence properties for field-emission displays

A new silicate blue phosphor Ca2HfSi4O12:Eu2+ (CHSO:Eu2+) was designed and synthesized via a solid-state reaction. The structure of CHSO:Eu2+ was analyzed by structure refinement. The electronic structure of CHSO was calculated using first-principles calculations, revealing its effect on luminescence and long-persistent properties. Owing to the O vacancies in the crystal structure, undoped CHSO showed wide blue emission (400–650 nm, λmax = 486 nm) under 296 nm excitation. After being irradiated with a UV lamp for 10 min, the CHSO sample showed obvious afterglow properties that could persist for approximately 50 min above the recognizable intensity level (≥0.32 mcd m−2). CHSO:Eu2+ exhibited excellent temperature sensitivity with a relative sensitivity of 4.5 % K−1@473K, which is higher than those of other Eu2+-based temperature sensor materials. The mechanism between thermal quenching and electronic structure was proposed. Moreover, CHSO:Eu2+ shows excellent cathode ray saturation and aging resistance. This study provides a potential temperature sensor, field-emission-display material, and theoretical reference for developing high-sensitivity temperature-sensing materials.

First‐principle calculations, crystal growth, and broadband near‐infrared luminescence of Nd:Y2Mg3(SiO4)3 single crystal

AbstractThis study successfully grew Y2Mg3(SiO4)3 (YMS) single crystals doped with Nd3+ ions via laser heated pedestal growth method for the first time. Based on first‐principle calculations, the structural relaxation, energy band structure, density of states, and optical properties of YMS and Nd:YMS crystals with multiple disordered structures were calculated for the first time. The refractive index of the YMS crystal was obtained to be 1.83. The optical properties including absorption spectra, near‐infrared (NIR) luminescence spectra, and fluorescence lifetime at 1080 nm (Nd3+: 4F3/2→4I11/2) were characterized and analyzed based on the grown Nd:YMS single crystal. The crystal was found to have an ultra‐wide half‐height width (46.99 nm) of emission cross‐section, and a fluorescence lifetime of 220.38 µs, making it a luminescence material with excellent comprehensive performance.

A Novel Broadband Green Phosphor La2W2O9: Bi3+, and Its Application in High Color-Rendering Index pc-WLED

Broadband green phosphors have important applications in overcoming the blue-green (cyan) 470–510[Formula: see text]nm gap of phosphor-converted white LED (pc-WLED) and achieving high color rendering index (CRI) white lighting. In this work, a broadband green phosphor La2W2O9: [Formula: see text]Bi[Formula: see text] was synthesized by solid-state method. The phase, morphology and luminescence properties of the series of phosphors were systematically studied. The results showed the La2W2O9: [Formula: see text]Bi[Formula: see text] green phosphor exhibits a wide emission band in the range of 400–800[Formula: see text]nm with full width at half-maximum (FWHM) of 164[Formula: see text]nm, filling the cyan gap and reaching its peak at 550[Formula: see text]nm. The phosphor exhibits broadband excitation, and the excitation range covers the wavelength region of 200–500[Formula: see text]nm, and matches well with commercial ultraviolet LED. With the obtained broadband green phosphor, commercial CaAlSiN3:Eu[Formula: see text] red phosphor, commercial BaMgAl[Formula: see text]O17:Eu[Formula: see text] blue phosphor, and a 365[Formula: see text]nm commercial chip, a warm white pc-WLED device with a high color-rendering index (Ra[Formula: see text]97.4, R1–R15[Formula: see text]90) and low correlated color temperature (CCT[Formula: see text]3610[Formula: see text]K) was fabricated. The results demonstrate the wide range of applications for La2W2O9:Bi[Formula: see text] phosphor in the field of premium warm white LED lighting.

Novel Vibrational Proteins.

Genetically encoded green fluorescent protein (GFP) and its brighter and redder variants have tremendously revolutionized modern molecular biology and life science by enabling direct visualization of gene regulated protein functions on microscopic and nanoscopic scales. However, the current fluorescent proteins (FPs) only emit a few colors with an emission width of about 30-50 nm. Here, we engineer novel vibrational proteins (VPs) that undergo much finer vibrational transitions and emit rather narrow vibrational spectra (0.1-0.3 nm, roughly 3-10 cm-1). In response to an amber stop codon (UAG), a terminal alkyne bearing an unnatural amino acid (UAA, pEtF) is directly incorporated in place of Tyr64 in the chromophore of pr-Kaede by genetic code expansion. Essentially, the UAA64 further conjugates into a large π system with the contiguous two editable amino acid residues (His63 and Gly65), resulting in a programmable Raman resonance shift of the embedded alkyne. In the proof-of-concept experiment, we constructed a series of novel pEtF-VP mutants and observed fine Raman shifts of the alkynyl group in different chromophores. The genetically encoded novel VPs, could potentially label tens of proteins in the future.

Suppression of the hole trap for high-quality amino-phosphine based InP quantum dots.

InP quantum dots (QDs) have emerged as promising nanomaterials in various fields due to their exceptional optical properties. However, its wide emission linewidth limits further application. In this study, we synthesized high-quality InP/ZnSe/ZnS QDs by suppressing hole defects. The unreacted In precursors during nucleation easily enter ZnSe in the subsequent shelling process, forming a hole trapping center that adversely affects the photo-excitons radiative recombination. Our results demonstrate that the presence of In ions in ZnSe shell enhances exciton-phonon coupling, broadens the fluorescence emission spectrum, and weakens exciton binding energy. The optimized InP QDs exhibit a line width of 44 nm and 90% PLQY at 630 nm. Furthermore, our investigation into the interaction between shell hole defects and core exciton function provides valuable insights for designing and preparing another high-performance core-shell heterojunction QDs.

Luminescent color modulation of Zn/BaAl2O4:0.2%Eu phosphors for LED application

Spinel-type aluminate (ZnAl2O4) doped with europium (Eu) ions has garnered considerable attention in the field of luminescence. This study explores a series of Zn/BaAl2O4:0.2%Eu phosphors (x = 0∼0.25, x is for the mole fraction of BaAl2O4), fabricated through a high temperature solid-phase reaction method in air or reduction environment. In the case of phosphors synthesized in air, the photoluminescence emission (PL) spectra show a series of sharp emission peaks at 570 nm, 589 nm, 620 nm, 660 nm, and 710 nm, which are generated by the 5D0-7FJ (J = 0, 1, 2, 3, 4) level transitions in Eu3+. Time-resolved photoluminescence and X-ray photoelectron spectroscopy (XPS) characteristics also validate the presence of Eu3+ in samples synthesized in air. An intriguing observation is the abnormally strong emission peak at 570 nm under 346 nm excitation, originating from the Eu3+5D0-7F0 level transition. For x = 0.15, the corresponding CIE color coordinate is (0.3246, 0.3449), suggesting its potential application as a mono-doped and uni-matrix white phosphor. On the other hand, phosphors synthesized in reduction environment exhibit PL spectra with a wide emission band spanning from 400 nm to 550 nm, resulting from the electric-dipole-allowed transition of f-d state of Eu2+. The partial substitution of Zn2+ with Ba2+ significantly enhances the Eu2+ luminescence intensity. Moreover, an elevation of the mole fraction of Zn/BaAl2O4:0.2%Eu leads to a notable redshift (450 nm→500 nm) in the emission peaks of Eu2+ caused by lattice expansion, providing the adjustability of emitting color.

Band-gap engineering enabled emission switch in solid-solution phosphors LiIn1-xScxGeO4:Bi3+ for spectral-temporal anti-counterfeiting

The interaction between matrix lattice and doped activator has long been pivotal topic in the research of the state-of-the-art functional materials, particularly luminescent materials. With the ceaseless development of advanced anti-counterfeiting, there are imperative need for developing luminescent materials with wide emission tunability, excellent visibility, and adjustable persistent luminescence. Herein, we present a paradigm to obtain great emission tunability in a solid-solution phosphors LiIn1-xScxGeO4:Bi3+ (x = 0–1) via band-gap engineering. With the increase in Sc content, the band-gap enlarges, causing the Bi3+ emissions gradually shift from 580 to 456 nm. As Sc substitution continues, the Bi3+ emissions transfer from the metal-to-metal charge transfer band to the inter s-p transition, resulting in a rapid shift in emission from 456 to 356 nm. This emission shift not only achieves a record total tunability of 224 nm among Bi3+-doped solid-solution phosphors but also an informative band-gap dependent emission mechanism of the Bi3+ activator. Furthermore, the samples gradually exhibited a persistent luminescence through the substitution process, attributed to the increasing traps by the thermoluminescence analysis. Leveraging these unique spectral properties, we designed two types of patterns that can be distinguished from color and time within the visible light range, demonstrating that the obtained phosphors can serve as promising candidate materials for spectral-temporal anti-counterfeiting.

Near‐Full‐Spectrum Emission Realized in a Single Lead Halide Perovskite across the Visible‐Light Region

AbstractThe engineering of tunable photoluminescence (PL) in single materials with a full‐spectrum emission represents a highly coveted objective but poses a formidable challenge. In this context, the realization of near‐full‐spectrum PL emission, spanning the visible light range from 424 to 620 nm, in a single‐component two‐dimensional (2D) hybrid lead halide perovskite, (ETA)2PbBr4 (ETA+=(HO)(CH2)2NH3+), is reported, achieved through high‐pressure treatment. A pressure‐induced phase transition occurs upon compression, transforming the crystal structure from an orthorhombic phase under ambient conditions to a monoclinic structure at high pressure. This phase transition driven by the adaptive and dynamic configuration changes of organic amine cations enables an effective and continuous narrowing of the band gap in this halide crystal. The hydrogen bonding interactions between inorganic layers and organic amine cations (N−H⋅⋅⋅Br and O−H⋅⋅⋅Br hydrogen bonds) efficiently modulate the organic amine cations penetration and the octahedral distortion. Consequently, this phenomenon induces a phase transition and results in red‐shifted PL emissions, leading to the near‐full‐spectrum emission. This work opens a possibility for achieving wide PL emissions with coverage across the visible light spectrum by employing high pressure in single halide perovskites.

Emergence of defects-mediated diluted ferromagnetic semiconductor (ZnS: La3+) Quantum Dots: A versatile platform for optoelectronic and spintronic applications

For the first time, La3+ ions incorporated into semiconductor Zinc Sulfide-Quantum Dots (ZnS-QDs), Zn1-xLaxS, were effectively produced via a straightforward co-precipitation approach, with diverse La ratios (0.00 ≤ x ≤ 0.15 at%). The phase analysis of the acquired QDs, conducted through Raman analysis and X-ray diffractometer (XRD), revealed a singular cubic ZnS structure, devoid of any impurities. Morphology studies by HR-TEM showed a nearly spherical particle with a size of approximately 6.4 nm. X-ray photoelectron spectroscope (XPS) investigation disclosed the significant presence of sulfur vacancies, along with the existence of the trivalent oxidation state of lanthanum (La3+) within the ZnS structure. Optical absorbance studies exhibited that all QDs were positioned approximately at the absorption edges of around 270 nm (4.59 eV), surpassing the bulk ZnS energy gap of 337 nm (3.67 eV), harmonically with the quantum confinement effect. Additionally, a pronounced band gap narrowing was observed with increasing the doping level of La ions, on account of the presence of defects that result in the creation of localized states inside the ZnS band structure. The optical results indicated the capability to fine-tune the optical energy gap, dispersion parameters, and enhance the nonlinear optical parameters, which makes these QDs well-suited for use in optoelectronic devices. Furthermore, the photoluminescence (PL) spectra indicated that the La3+-doped ZnS nanocrystals (NCs) exhibited a wide visible emission band (blue emission) at room temperature, influenced by the La-doping concentration. Besides, the La3+-doped ZnS QDs elucidated ferromagnetic behavior at room temperature, which may be accredited to the vacancy-assisted bound magnetic polaron model. Exploring the intriguing magnetic features of ZnS: La3+ QDs could open avenues for developing innovative spintronic devices.