The year 2010 marks the 100th anniversary of thebirth of Professor, Doctor of Physical and Mathematical Sciences, the participant of the Great PatrioticWar, Valentina Abramovna Ioffe, awarded manyorders and medals. Valentina Abramovna Ioffe cameto the Institute of Silicate Chemistry of the Academyof Sciences of the Soviet Union in 1951, immediatelyafter its foundation, and introduced a new directioninto research works performed at the institute, i.e., thestudy of electrical properties of glasses. More recently,she organized a group for the investigation of electricalproperties of dielectrics. In 1963, on the initiative ofthe Director of the Institute N.A. Toropov, the Laboratory of Electronic Processes was created, which,over the next 15 years, was headed by V.A. Ioffe.The first stage of investigations carried out in thelaboratory was concerned with the analysis of mechanisms of charge compensation in the lattice of transition and rareearth metal oxides, as well as with theinfluence of lattice defects on electrical conductivity.This period of the scientific activity of V.A. Ioffe wasdevoted to systematic investigations of dielectric lossesin silica glasses, ferrites, crystalline aluminosilicates,and rareearth aluminates at low temperatures. Iofferevealed a very high sensitivity of dielectric losses tothe degree of depolymerization of the structural glassnetwork. She paid much attention to the study of aluminates of some rareearth elements in which the permittivity reaches 600. More recently, these works wereawarded the medals of the AllUnion Exhibition ofAchievements of National Economy of the SovietUnion.The other side of the V.A. Ioffe activity consisted ininvestigating electrical properties of oxides of variablevalence elements and the mechanism of their conduction. These studies led to the development of the concept of the influence of structural defects on electricalproperties of complex oxides and to the necessity ofstudying the mechanism of defect formation. At thesame time, the range of investigation methodsemployed by V.A. Ioffe was extended by using opticaland magnetic resonance techniques, as well as methods for studying electrical conductivity, thermopower,and permittivity. Electron paramagnetic resonancespectrometers (RE1301, JEOL) and the widelinenuclear magnetic resonance spectrometer were usedover a wide range of temperatures (down to 77 K).Under the supervision of V.A. Ioffe, the procedure forgrowing highquality single crystals of complex oxidesof transition metals and rareearth ions by means ofspontaneous crystallization from own melt, crystallization from solutions in lowmelting salts, and gastransport reactions was implemented at the laboratory.The history of scientific investigations of the laboratory at the first stage of its development wasdescribed by Ioffe in [1].The second stage (since 1978) has been associatedwith the advent of a younger generation, who creatednew experimental and theoretical capabilities for investigations, i.e., the study in the range of liquidheliumtemperatures (down to 4 K) on the RE1306 spectrometer and the widespread use of computational methodsfor simulating physical properties of materials, whichmade it possible to investigate phase transitions and