Wide Bandgap Power Semiconductor Devices Research Articles

Wide band-gap power semiconductor devices

The recent progress in the development of high-voltage SiC, GaN and diamond power devices is reviewed. Topics covered include the performance of various rectifiers and switches, material and process technologies of these wide band-gap semiconductor devices and future trends in device development and industrialisation.

Future navy application of wide bandgap power semiconductor devices

An assessment of future U.S. Navy electrical power requirements is presented to identify wide bandgap power device application opportunities, issues, and challenges. An emphasis is placed on blocking voltage and the potential of wide bandgap power semiconductor devices to enable higher voltage machines that can meet the U.S. Navy's future electrical power challenges. Estimates of the blocking voltage and power requirements are made for various power systems envisioned for future shipboard application. Blocking voltage estimates are made using a simplified stress level analysis to illustrate the basic concepts underlying power semiconductor device application in U.S. Navy shipboard systems.

Performance comparison of wide bandgap semiconductor rf power devices

Impressive radio frequency power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC metal semiconductor field effect transistors (MESFETs), SiC static induction transistors (SITs), and AlGaN heterojunction field effect transistors (HFETs). AlGaN HFETs have achieved the highest fmax of 97 GHz. 4H-SiC MESFETs have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SITs have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover, a one kilowatt, 600 MHz SiC power module containing four multi-cell SITs with a total source periphery of 94.5 cm has been demonstrated.

Silicon Carbide And Gallium Nitride Rf Power Devices

AbstractImpressive RF power performance has been demonstrated by three radically different wide bandgap semiconductor power devices, SiC MESFET's, SiC SIT's, and AlGaN HFET's. AlGaN HFET's have achieved the highest fmax 97 GHz. 4H-SiC MESFET's have achieved the highest power densities, 3.3 W/mm at 850 MHz (CW) and at 10 GHz (pulsed). 4H-SiC SIT's have achieved the highest output power, 450 W (pulsed) at 600 MHz and 38 W (pulsed) at 3 GHz. Moreover a one kilowatt, 600 MHz SiC power module containing four multi-cell SIT's with a total source periphery of 94.5 cm has been demonstrated.