SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do 440-746, Republic of Korea(Received February 15, 2015 ; revised February 19, 2015 ; accepted February 20, 2015)AbstractRecently, oxide TFTs has attracted a lot of interests due to their outstanding properties such as excellentenvironmental stability, high mobility, wide-band gap energy and high transparency, and investigated throughthe method using vacuum system and wet solution. In the case of the method using wet solution, processis very simple, however, annealing process should be included. In this study, to overcome the problem ofannealing process, atmospheric pressure plasma was used for annealing, and the electrical characteristics suchas on/off ration and mobility of device were investigated.