Evolution Of Wetting Layer Research Articles

Wetting layer evolution and interfacial heat transfer in water-air spray cooling process of hot metallic surface

In order to respond to the increased demand for clean energy without harming the atmosphere through polluting emissions, energy production from the hydrogen combustion become largely used. This work presents a numerical study of the injection conditions effect on the structure of the H2-air diffusion flame. The aim is to reproduce a practical case of non-polluting combustion and resulting in very high temperatures. The configuration is composed of two axisymmetric coaxial jets, as can be found in the diffusion burners. A presumed probability density function approach is used to describe the chemistry-turbulence interaction. The k-? model of turbulence is used. Particular attention is given to phenomena anchoring or blowout of the flame.

Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots

For InAs/GaAs(001) quantum dot (QD) system, the wetting layer (WL) evolution and its temperature dependence were studied using reflectance difference spectroscopy and were analyzed with a rate equation model. WL thicknesses showed a monotonic increase at relatively low growth temperatures but showed an initial increase and then decrease at higher temperatures, which were unexpected from a thermodynamic understanding. By adopting a rate equation model, the temperature dependence of QD formation rate was assigned as the origin of different WL evolutions. A brief discussion on the indium desorption was given. Those results gave hints of the kinetic aspects of QD self-assembly.

Evolution of wetting layer of InAs∕GaAs quantum dots studied by reflectance difference spectroscopy

For the InAs∕GaAs quantum-dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS) in combination with atomic force microscopy and photoluminescence. One transition related to the light hole in the WL has been observed clearly in RDS, from which its transition energy and in-plane optical anisotropy (OA) are determined. The evolution of WL with the InAs dot formation and ripening has been discussed. In addition, the remarkable changes in OA at the onsets of the dot formation and ripening have been observed, implying the mode transitions of atom transport between the WL and the dots.