Wet Etching Research Articles

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices.

In the framework of fully vertical GaN-on-Silicon device technology development, we report on the optimization of non-alloyed ohmic contacts on the N-polar n+-doped GaN face backside layer. This evaluation is made possible by using patterned TLMs (Transmission Line Model) through direct laser writing lithography after locally removing the substrate and buffer layers in order to access the n+-doped backside layer. As deposited non-alloyed metal stack on top of N-polar orientation GaN layer after buffer layers removal results in poor ohmic contact quality. To significantly reduce the related specific contact resistance, an HCl treatment is applied prior to metallization under various time and temperature conditions. A 3 min HCl treatment at 70 °C is found to be the optimum condition to achieve thermally stable high ohmic contact quality. To further understand the impact of the wet treatment, SEM (Scanning Electron Microscopy) and XPS (X-ray Photoelectron Spectroscopy) analyses were performed. XPS revealed a decrease in Ga-O concentration after applying the treatment, reflecting the higher oxidation susceptibility of the N-polar face compared to the Ga-polar face, which was used as a reference. SEM images of the treated samples show the formation of pyramids on the N-face after HCl treatment, suggesting specific wet etching planes of the GaN crystal from the N-face. The size of the pyramids is time-dependent; thus, increasing the treatment duration results in larger pyramids, which explains the degradation of ohmic contact quality after prolonged high-temperature HCl treatment.

Real-time SERS sensing of highly toxic seawater contaminants using plasmonic silver assembled pyramidal/nanowire heterostructures

Hierarchically oriented plasmonic nanostructures have attracted an advanced molecular sensing platform for multifaceted applications. In the present work, we have attempted to fabricate ultrasensitive and cost-effective pyramidal/nanowire hetero arrays, hosted with silver nanoparticles for the effective surface-enhanced Raman spectroscopy (SERS) assisted detection of toxic water contaminants. Three-dimensionally oriented pyramidal/nanowire hetero arrays with enhanced surface area were fabricated by combining wet etching and metal-assisted chemical etching techniques. The regulation of structural features was achieved by controlling the process parameters during fabrication. Particularly, the evolution of morphological properties of the hybrid sensor was investigated in terms of nanowire aspect ratio and further analyzed in terms of SERS properties. The hetero arrays exhibited significant enhancement in Raman signal for sensing organic pollutants. Moreover, these hetero arrays with a nanowire length of ∼1 µm exhibited the highest signal enhancement. Further, the excellent reproducibility and reusability characteristics were also demonstrated for the fabricated sensors. Different cationic and anionic organic pollutants were employed for efficacy studies which showed detection limits ranging from femtomolar to picomolar levels. Finally, the real-time sensing of organic contaminants such as aniline was also investigated from seawater with an estimated enhancement factor of 8 × 108, indicating that as-fabricated hetero arrays can perform as outstanding SERS sensors for environmental remediation applications.

High-Performance Visible-to-SWIR Photodetector Based on the Layered WS2 Heterojunction with Light-Trapping Pyramidal Black Germanium.

This study presents a layered transition metal dichalcogenide/black germanium (b-Ge) heterojunction photodetector that exhibits superior performance across a broad spectrum of wavelengths spanning from visible (vis) to shortwave infrared (SWIR). The photodetector includes a thin layer of b-Ge, which is created by wet etching of germanium (Ge) wafer to form submicrometer pyramidal structures. On top of this b-Ge layer, the WS2 thin film is deposited using pulsed laser deposition. In comparison to conventional germanium, b-Ge absorbs about 25% more light between 850 and 1750 nm wavelengths. The WS2/b-Ge photodetector has a peak photoresponsivity of 0.65 A/W, which is more than twice the photoresponsivity of the WS2/Ge photodetector at 1540 nm. Additionally, it shows better responsivity and response speed compared with other similar state-of-the-art photodetectors. Such an improvement in the performance of the device is credited to the light-trapping effect enabled by the germanium pyramids. Theoretical simulations employing the finite-difference time-domain technique help validate the concept. This novel photodetector holds promise for efficient detection of light across the vis to SWIR spectrum.

Fabrication of microchannels and through-holes in Borofloat glass using Cr thin film with positive photoresist as the masking layer through wet etching

The present work investigates the efficiency of the masking layer, composed of Cr thin film and positive photoresist (AZ1512HS), to fabricate microchannels and through-holes in Borofloat glass wafers via wet etching, utilizing 20 % HF. The initial phase of the work emphasizes microchannel fabrication. ∼50 µm deep and well-defined microchannels are accomplished with no discernible surface defects on the wafer. In the later phase, predominantly sharp-edged through-holes are successfully fabricated in the wafer, without any observable pinholes, during etching for 300 min. The masking layer constantly exhibited robust adhesion to the wafer throughout the etching process, affirming its effectiveness. This work demonstrates the first instance of fabricating 500 µm deep through-holes in glass with Cr thin film and photoresist as a masking layer.

Study on the performance of InGaN-based micro-LED by plasma etching combined with ion implantation process

This study utilized blue-light epitaxial wafers and employed semiconductor processes such as maskless laser writing, dry etching, wet etching, passivation layer deposition, electron beam evaporation, and ion implantation to fabricate micro-light emitting diode (μLED) arrays with different pixel sizes but the same emitting area (900 μm²). The μLED arrays with single pixel sizes of 5 μm, 10 μm, and 15 μm were fabricated, with array numbers of 6×6, 3×3, and 2×2, respectively. This study proposes etching the material in the channel region while retaining a certain width for implantation, known as the sidewall ion implantation process, aiming to achieve better insulation characteristics by using ion implantation technology to insulate the sidewall regions. It involves ion bombardment of the defect areas generated after plasma etching and the use of a passivation layer for protection. The isolation characteristics of μLED arrays processed by sidewall implantation exhibited better electrical isolation than those of μLED arrays processed only by plasma. The light output power, external quantum efficiency, and wall-plug efficiency were all superior for the sidewall implantation process when the device was miniaturized to 5 μm. Overall, the sidewall implantation process combined with plasma dry etching effectively improved the light output characteristics, with the enhancement ratio increasing as the device was miniaturized.

Deposition of CdSe Nanocrystals in Highly Porous SiO2 Matrices-In Situ Growth vs. Infiltration Methods.

Embedding quantum dots into porous matrices is a very beneficial approach for generating hybrid nanostructures with unique properties. In this contribution we explore strategies to dope nanoporous SiO2 thin films made by atomic layer deposition and selective wet chemical etching with precise control over pore size with CdSe quantum dots. Two distinct strategies were employed for quantum dot deposition: in situ growth of CdSe nanocrystals within the porous matrix via successive ionic layer adsorption reaction, and infiltration of pre-synthesized quantum dots. To address the impact of pore size, layers with 10 nm and 30 nm maximum pore diameter were used as the matrix. Our results show that though small pores are potentially accessible for the in situ approach, this strategy lacks controllability over the nanocrystal quality and size distribution. To dope layers with high-quality quantum dots with well-defined size distribution and optical properties, infiltration of preformed quantum dots is much more promising. It was observed that due to higher pore volume, 30 nm porous silica shows higher loading after treatment than the 10 nm porous silica matrix. This can be related to a better accessibility of the pores with higher pore size. The amount of infiltrated quantum dots can be influenced via drop-casting of additional solvents on a pre-drop-casted porous matrix as well as via varying the soaking time of a porous matrix in a quantum dot solution. Luminescent quantum dots deposited via this strategy keep their luminescent properties, and the resulting thin films with immobilized quantum dots are suited for integration into optoelectronic devices.

Quantitative piezoelectric measurements of partially released Pb(Zr, Ti)O3 structures

The effective large signal longitudinal piezoelectric coefficient (d33,f∗) of piezoelectric thin films on rigid substrates has been widely investigated. Unclamped piezoelectric thin films are predicted to have a higher d33,f∗ coefficient due to reduced constraints on piezoelectric strain, domain reorientation, and domain wall motion, but quantitative measurements of this coefficient have been limited. This study uses microfabrication techniques along with double-beam laser interferometry (DBLI) to accurately determine the longitudinal piezoelectric coefficient of Pb(Zr,Ti)O3 thin films in partially released piezomicroelectromechanical structures. A two-step backside release process was used: first, deep reactive ion etching to create backside vias and second, wet etching of the ZnO sacrificial layer to release the area beneath the Pb(Zr,Ti)O3 thin films. Post wet etching, optical profilometry showed concavely deformed diaphragms resulting from asymmetrical stress profiles through the diaphragm thickness. DBLI was then used to examine diaphragm deflection under an applied unipolar voltage ranging from 0 to 10 V. Devices with 50% and 75% of the area beneath the top electrode released exhibited large signal d33,f∗ values of 410 ± 6 and 420 ± 8 pm/V, respectively, more than three times higher than the d33,f∗ value of the clamped samples: 126 ± 13 pm/V. The reasons contributing to the large d33,f∗ include (i) the change in stress levels due to the release process, (ii) the elimination of mechanical constraints from substrate clamping, and (iii) enhanced domain reorientation. These findings confirm that substrate declamping significantly boosts the piezoelectric coefficient, bringing d33,f∗ closer to the bulk longitudinal piezoelectric coefficient (d33).

Ultra-smooth processing of lithium niobate for outstanding mid-infrared transmittance.

The fabrication of anti-reflection (AR) subwavelength structures (SWSs) of lithium niobate (LN) is a challenging but rewarding task in mid-infrared LN laser systems. However, there are still some issues with the high-quality processing and fabrication of bifacial AR SWSs. Herein, a novel, to the best of our knowledge, approach to the fabrication of SWSs was proposed, which includes femtosecond laser ablation followed by wet etching and thermal annealing. The fabricated structures exhibit high surface quality (Ra = 0.08 nm) and uniformity. According to the experimental and simulated results, the transmittance of the mid-infrared AR SWSs with a period of 1.8 µm could be improved from 78% to 87% in the 3.6-5 µm band. Furthermore, the double-sided construction enabled a transmittance of up to 90%. The results have great potential in the promotion of the development of mid-infrared laser systems and LN-based photonics.

Enhanced forward emission by backside mirror design in micron-sized LEDs.

Tiny InGaN micro-LEDs (μ-LEDs) play a pivotal role in emerging display technologies, particularly augmented reality (AR) applications. Achieving both high internal quantum efficiency (IQE) and efficient light extraction efficiency (LEE) is essential. While wet chemical etching can recover the IQE after dry etching, it alters the pixel shape, impacting optical properties and reducing the LEE. In this study, we overcome this issue by fabricating 1 μm thin-film-based μ-LED emitter arrays with a metallic backside mirror deposited on a patterned dielectric material around the μ-LED mesa. This concave mirror can be straightforwardly integrated into a thin-film LED process chain, and it redirects photons within the μ-LED structure, enhancing the LEE in the forward direction. Electro-optical measurements show a 2.1-fold improvement in light output within the ±15∘ emission cone compared to μ-LEDs with vertical sidewalls. These findings hold significant implications for μ-LED projection displays, where maximizing the overall efficiency and directionality is critical.

Effect of Triton X-100 surfactant and agitation on tetramethylammonium hydroxide wet etching for microneedle fabrication

Solid silicon (Si) microneedles have many applications such as skin pretreatment to form micrometer-sized holes in the skin surface in transdermal drug delivery systems. Wet etching based on tetramethylammonium hydroxide (TMAH) is an efficient method to fabricate solid microneedles. However, it is challenging to increase the density of microneedle arrays due to the faster lateral etching than the vertical etching that requires a large initial mask size. In this work, we used wet etching based on TMAH to fabricate solid Si microneedles. One kind of nonionic surfactant, Triton X-100, was introduced into the TMAH solution to suppress the lateral etching. When Triton X-100 was added into TMAH for a given etching condition, the maximum height (attained right before the mask fell off) of microneedles could reach ∼230 μm for 600 μm square-shaped mask size and 700 μm array period, compared to microneedles of maximum 152 μm height for the same mask size and period without surfactant addition. Correspondingly, when the target heights of microneedles were the same as ∼230 μm, denser (down to 700 μm period, 600 μm mask size) microneedle arrays were achieved with the help of Triton X-100, in comparison to arrays down to 900 μm period (800 μm mask size) without surfactant addition. Furthermore, agitation by a magnetic stirring bar is important for the fabrication of dense solid Si microneedle arrays based on TMAH. The microneedle structures were rhombic pyramid in shape with Triton X-100 and agitation. But microneedle structures obtained with Triton X-100 yet without agitation were octagonal pyramid in shape with a much less steep side surface.

The impact of pulsed Nd:YAG laser on the surface of n-Si and photo-electrical performance of silicon solar cells

Texturizing the surface of a silicon solar cell enhances performance by reducing reflection losses. Pyramidal texturization via wet chemical etching is standard in manufacturing, while plasma etching is often used for vertical hole texturization. Laser texturization offers a chemical-free, user-friendly alternative to plasma etching. Infrared (IR) transmission studies indicate that laser-textured samples transmit more IR light through n-Si than normally textured samples, suggesting that vertical grooves from laser texturization allow deeper light penetration. Analyses using cross-sectional Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersion x-ray (EDX), and Energy Dispersive Spectroscopy (EDS) demonstrate the effects of laser texturization on the front surface of textured n-Si wafers. However, silicon solar cells with laser-textured surfaces demonstrated lower conversion efficiencies (1.20% to 4.30%) compared to conventionally textured cells (14.30%). The short-circuit current density (JSC) was also lower in laser-textured cells, below 17 mA cm−2, compared to 34.44 mA cm−2 in normally textured cells. At the same time, higher laser power (114 W) during texturization also led to the lowest JSC and open-circuit voltage (VOC), indicating that laser texturization may introduce defects and dislocations that degrade Si properties.

Transfer of micron pattern with reactive atmospheric plasma jets into fused silica

Pattern transfer by plasma etching is a traditional standard technology in microelectronics and other micron technologies. These technologies require vacuum conditions, which limit throughput, size, and low-cost fabrication. Recent developments in low cost atmospheric plasma technologies may be suitable to realize pattern transfer without vacuum conditions. Reactive atmospheric plasma jet etching has been used to transfer aluminum mask patterns to fused silica. Aluminum line patterns of 2.5 to 50 µm width on fused silica wafer are exposed to a static as well as a scanning CF4/O2 reactive atmospheric plasma jet with a footprint diameter of 0.85 mm (full width at half maximum), resulting in etching only the SiO2 and causing a nearly isotropic etch with an etch rate of about 200 nm/s. As a result, line narrowing, trapezoidal line cross-sections, and under-etching were observed. The successfully transferred line patterns with the demonstrated widths and depths are of technological interest in various fields of application. Therefore, this approach enables low-cost patterning of fused silica through the use of reactive atmospheric plasma jet etching for micron-scale pattern transfer. This advancement addresses the limitations of both traditional vacuum-based and wet etching methods.

Controllable Preparation of Fused Silica Micro Lens Array through Femtosecond Laser Penetration-Induced Modification Assisted Wet Etching.

As an integrable micro-optical device, micro lens arrays (MLAs) have significant applications in modern optical imaging, new energy technology, and advanced displays. In order to reduce the impact of laser modification on wet etching, we propose a technique of femtosecond laser penetration-induced modification-assisted wet etching (FLIPM-WE), which avoids the influence of previous modification layers on subsequent laser pulses and effectively improves the controllability of lens array preparation. We conducted a detailed study on the effects of the laser single pulse energy, pulse number, and hydrofluoric acid etching duration on the morphology of micro lenses and obtained the optimal process parameters. Ultimately, two types of fused silica micro lens arrays with different focal lengths but the same numerical aperture (NA = 0.458) were fabricated using the FLPIM-WE technology. Both arrays exhibited excellent geometric consistency and surface quality (Ra~30 nm). Moreover, they achieved clear imaging at various magnifications with an adjustment range of 1.3×~3.0×. This provides potential technical support for special micro-optical systems.

Anisotropic growth of Ag nanonails induced by plasmon-mediated chemical reactions in cross-shaped nanocavity array

The Ag nanonail rooted in Au cross-channel nanocavity is fabricated by plasmon-mediated chemical reactions (PMCRs). The Au cross-channel nanocavity is prepared based on two-dimensional polystyrene (PS) nanosphere template through wet etching, and the shape of Au cross-channel nanocavity changes from trapezoidal to triangular, depending on the wet etching time. The growth of Ag nanostructures in Au channels by PMCRs indicates the morphology of Ag nanostructures has changed from Ag nanoparticles to nanonails, which is regulated by the shape of Au nanocavities and the exciting light polarization. The hotspots distributions results in the anisotropic growth of Ag nanostructures induced by PMCRs, which leading to the different Ag nanostructures depending on the shape of Au nanocavity and light polarization, as confirmed by FDTD simulations. In comparison with others reports, our nanocavity provide more parameters to control the shapes of Ag nanostructures, the nanocavity shape, the light polarization and the growth time. Our work provides a profound insight into the construction of periodic nanostructures and reconstruction of hotspots.

The study of ([formula omitted]01) plane in β-Ga2O3 crystal

This study confirms that the symmetric plane of (001) with respect to the twin boundary in β-Ga2O3 is the (1¯01), and it has been systematically characterized. X-ray diffraction has determined that diffraction peaks appear only at positions where the l component of the miller indices hkl is even, and these positions coincide with the diffraction peak positions of the (001) plane. The termination atomic arrangement of the (1¯01) plane is not exclusively composed of gallium or oxygen atoms, it exists in two forms with hanging bond densities of 1.614 × 1015/cm2 and 2.421 × 1015/cm2, respectively. Wet etching experiments on the (1¯01) plane reveal distinct defect morphologies compared to the (001) plane, indicating its suitability for distinguishing between these two planes. The Raman modes of (1¯01) plane coincide with other crystal planes. Through optical transmission spectra, X-ray photoelectron spectra, and Ultraviolet photoelectron spectra, its bandgap width Eg of 4.76 eV, the valence band maximum EVBM of 3.64 eV and the Schottky barrier height Φsurf of 1.12 eV were determined. Compared to studies of other crystal planes, it is believed that the (1¯01) plane also possesses similar application potential.

Wide scan angle multibeam conformal antenna array with novel feeding for mm-wave 5G applications

This paper presents a low-profile wide scan angle multibeam conformal antenna array system with a novel feeding network for 28 GHz mm-wave 5G applications. The proposed antenna system utilizes two conventional branch-line couplers as its beamforming network. A novel feeding technique is applied to generate 7 beams with these couplers that are usually capable of generating 2 beams. The proposed solution provides a wide scanning range with a minimum realized gain of 5 dBi from −90° to 90° owing to this feeding approach and the peculiar placement of the array elements on a 0.15 mm thick R-F775 bendable substrate. The generated beams at their steer direction have the minimum and maximum gain values of 6.5 dBi and 9.7 dBi, respectively. A low-cost PCB manufacturing technique based on soft lithography and wet etching is used. The system dimensions excluding extra connector sections are 67×15×3mm3. The proposed flexible design is suitable for lightweight 5G communication systems and handsets with its compact low-complexity beamforming network, and wide 180° continuous covering angle.

MXene Synthesis and Carbon Capture Applications: Mini-Review.

MXenes, a class of two-dimensional transition metal carbides, nitrides, and carbonitrides, have garnered significant attention due to their remarkable potential for energy storage, electrocatalysis, and gas separation applications. The fabrication processes of MXene involve building up the MXene structure from constituent elements and the selective elimination of M-A bonds from the precursor MAX. However, considerable efforts are still required to design and develop efficient MXene-based technologies. This review article aims to briefly analyse the synthesis methods employed for MXene production, ranging from direct synthesis and conventional chemical wet etching approach to the more recent molten salt etching technique. The review highlights the advancements made in achieving precise control over the terminal groups, which is paramount for tailoring the properties of MXenes for specific applications. Furthermore, the potential of MXene-based materials for carbon capture applications, particularly in developing advanced adsorbents, is emphasized. The in-depth examination of MXene synthesis techniques and their implications for carbon capture applications provides a solid foundation for developing and optimizing these promising materials.

Enhancing Si1-XGex/Si Etch Rate Selectivity Using Etching Inhibitor in Radical Oxidation By Halide-Based Oxidant

As the technology node shrinks, innovation in the metal-oxide-semiconductor field-effect transistor (MOSFET) architecture has been required to mitigate the short-channel effects (SCE). Thus, planar FET had changed to FinFET and now gate-all-around FET (GAAFET) has been introduced with entering the 3-nm-generation. To fabricate GAAFET, selective etching of Si1-xGex- to Si-film is a key technology. According to the International Roadmap for Devices and Systems (IRDS™), the gate width of GAAFET is around 30 nm. Therefore, higher than 30 nm/min of etch rate for throughput and more than 400:1 of selectivity for acquiring a uniform Si-channel layer are required.As is well known, the etch rate in wet etching strongly depends on the standard reduction potential (SRP) of the oxidant. Our research group previously revealed the radical oxidation mechanism of sodium periodate (NaIO4) oxidant. In an acidic medium, NaIO4 can exist in periodate ion (IO4 -) form capable of generating hydroxyl radical (•OH). The high SRP value of hydroxyl radical (2.80 eV) compared to conventional oxidant, hydrogen peroxide (H2O2, 1.76 eV) and peracetic acid (PAA, 1.75 eV), resulted significantly high etch rate. In subsequent research, we introduced inhibitors reducing the Si-film etch rate to enhance Si1-xGex/Si etch rate selectivity when using sodium periodate as an oxidant.Acetic acid is commonly used as an additive in wet etchants to maintain uniform pH and control the etching of Si-film. However, it has several issues, strong vinegar odor, relatively large concentration to act, etc. Therefore, other additives are needed to substitute acetic acid. In selecting inhibitors, 2 factors are considered, i) scavenging effect for hydroxyl radical, and ii) hydrophobicity, as shown in Figure 1. Because the concentration of hydroxyl radical influences not only the Si1-xGex-film etch rate, but the Si-film etch rate, the scavenging effect of an inhibitor can reduce the film etch rate to enhance etch rate selectivity. Furthermore, the hydrophobicity part of inhibitors can build a hindrance layer on Si-film. Generally, Si-film has more hydrophobicity than Si1-xGex-film, inhibitors having hydrophobicity part are more prone to form a hindrance layer on Si-film than Si1-xGex-film. This results in the enhancement of Si1-xGex/Si etch rate selectivity by reducing Si-film considerably than Si1-xGex-film. The qualitative comparison of hydroxyl radical concentration depending on inhibitors and characterization methods to confirm the hindrance layer will be presented in detail. Acknowledgement This work was supported by the Technology Innovation Program (20022475, Development of wet Etchant capable of high selection etching in microprocesses below 10 nm) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea) References [1] Lee, Seung-Jae, et al. "Extremely high selective Si1−xGex-film wet etchant generating highly dissolved oxygen via peracetic acid oxidant for lateral gate-all-around FETs with a logic node of less than 3-nm." Chemical Engineering Journal 475 (2023): 146257. Figure 1

(Invited) III-Nitride Ultraviolet LEDs and Lasers for Applications in Biology and Medicine

Ultraviolet (UV) light emitters with large-energy photons are being developed for emerging biology and medicine applications such as sterilization, water/air purification, and medical treatments, as a replacement for mercury vapor lamps. Solid-state UV light-emitting diodes (LEDs) and lasers based on wide bandgap III-Nitrides offer compact sizes, wavelength tuning, long lifetimes, and sustainability over mercury vapor lamps. While visible LEDs and lasers with longer emission wavelengths find widespread commercial uses for solid-state lighting and display, UV emitters with AlGaN heterostructures struggle with poor external quantum efficiencies of typically less than 10%, which drop further when wavelengths get shorter. Therefore, it is extremely challenging to realize high-efficiency UV emitters despite the demand for compact UV light source, especially for disinfection and sterilization from the pandemic as those high-energy photons can break DNA/RNA bonds and deactivate virus/bacteria. Here, I will discuss our recent developments toward realization of high-efficiency UV LEDs and lasers.To enhance the radiative recombination rate (R sp) from the AlGaN quantum well (QW) active region, we had pursued novel QW design to overcome issues from the existence of valence subbands crossover. Specifically, the arrangement of the three energy-degenerate valence subbands - heavy hole (HH), light hole (LH), and the crystal-field split-off hole (CH) bands for high Al-content and low Al-content AlGaN QWs are completely different. The ordering of the valence bands strongly affects the optical matrix element via the oscillator strength, as well as the direction of the photon emission. Our work has proposed promising solution on the use of delta-QW design to address the valence subbands crossover issue, in order to significantly boost up the R sp. In addition, to enhance the extraction efficiency of UV emitters, we demonstrated the realization and characterization of top-down fabricated, electrically driven UV micropillar array LEDs emitting at 286 nm with a narrow, 9 nm linewidth and output power densities up to 35 mW/cm2. Top-down fabrication allows for formation of perfectly uniform arrays of micropillars with easily tunable diameter and pitch, which cannot be achieved with epitaxially grown nanowires without the use of selective area epitaxy. Dry etch damage induced surface losses were avoided through the use of a two-step etch process combining a Cl dry etch and a hydroxyl-based wet etch to form the micropillar arrays. We also revealed that the unique inverse-taper profile of our micropillars could produce significant enhancements in the extraction efficiency with the increased taper angle. Lastly, our developed III-Nitride wet etch by the use of hydroxyl-based chemicals such as potassium hydroxide (KOH) investigated the effects of temperature, concentration, and the damage recovery aspects of hydroxyl etching of III-Nitride nano and micro structures, leading to important smooth surface profiles for micropillar/nanowire LEDs and optimized mirror facets for ridge-emitting UV lasers.

(Invited) Spatially–Resolved Luminescence Properties of Etched Quantum Well Microstructures

Fabrication processes for photonic devices, especially micro- or nano-photonic devices, call for some kind of control of the materials’ optical properties at the stage of the final device. Our study focusses on measuring the optical quality of quantum well (QW) containing materials after device processing, using steps such as etching which allows fabrication of optical waveguides for example. We first designed and realized specific material structures based on an InP substrate, with a series of InAsxP1-x quantum wells such as illustrated on the figure. The samples were grown by gas-phase molecular beam epitaxy. The samples were characterized by spatially-resolved photoluminescence (PL) at low temperature (10 K). The top right part shows a typical spectrum measured from the sample we have grown: sharp lines associated with each QW can be clearly identified thanks to a careful grading of the As/P composition in each QW, while keeping its thickness to a constant value (typically 7 to 8 nm). Then we etched the samples (in the form of rectangular ridges as shown) using different etching processes, based either on wet etching or reactive ion etching (RIE), and recorded the PL spectra with high spatial resolution across the obtained structures. In parallel, the samples after etching were also characterized by cross-sectional scanning electron microscopy. Data processing from the series of PL spectra was then performed in order the characterize the effects of etching on the QW materials.We show PL intensity profiles across a series of etched stripes of different widths resulting from a RIE process. These intensity profiles were obtained from the lines associated with the different QWs in the structure. One can observe, first of all, that the PL intensity gradually increases from the edges to the center of the stripes, over a range of up to 10 µm. One can also observe that for “wide” stripes, i.e. 30 or 50 µm, the PL intensity for each line saturates at the same level in the central part. However, for the narrower stripes (10 or 20 µm), the PL signal does not reach the same level. This is the signature of some PL-limitation phenomenon, which extends its effects far from the etched sidewalls. A “standard” phenomenon resulting solely from non-radiative recombination at the etched sidewalls is excluded. Non-radiative recombination can only affect regions which are less than one charge carrier diffusion length from the sidewalls. Diffusion length in our materials is less than 1 µm. Therefore, some kind of “long range” interaction seems to affect our samples. We propose that this long range interaction is due to some stray static electric field resulting from the presence of residual ions left by the etching process at the sidewalls. The electric field affects the PL intensity through dissociation of excitons. Moreover, we observed that different conditions for the etching process (wet etching versus RIE, crystallographic orientation of the stripes) impact the magnitude of this PL intensity quenching.[1] Pearton S 1997 Materials Science and Engineering: B 44 1–7[2] Landesman J P, Isik-Goktas N, LaPierre R R, Levallois C, Ghanad-Tavakoli S, Pargon E, Petit-Etienne C and Jiménez J 2021 Journal of Physics D: Applied Physics 54 445106[3] Fiore A, Rossetti M, Alloing B, Paranthoen C, Chen J X, Geelhaar L and Riechert H 2004 Physical Review B 70 205311[4] Bludau W and Wagner E 1976 Physical Review B 13 5410–5414 Figure 1