Weak Localization Correction Research Articles

Weak localization at arbitrary disorder strength in systems with generic spin-dependent fields

We present a theory of weak localization (WL) in the presence of generic spin-dependent fields, including any type of spin-orbit coupling, Zeeman fields, and nonhomogeneous magnetic textures. We go beyond the usual diffusive approximation, considering systems with short-range disorder of arbitrary strength and obtain a compact expression for the weak localization (WL) correction to the conductivity in terms of the singlet-triplet polarization operator in momentum space. The latter can be directly related to the solution of the quasiclassical Eilenberger equation for superconducting systems. This formulation presents an intuitive framework to explore how the interplay of various spin-dependent fields drives weak (anti) localization. We apply our results to study in-plane magnetoconductivity in systems with spin-orbit coupling and in newly discovered altermagnets. Our results enable straightforward calculation of the WL conductivity at arbitrary disorder strength, which can be particularly useful for interpreting experiments on high-mobility samples. Published by the American Physical Society 2024

Coherent backscattering in the topological Hall effect

The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin–orbit torques and domain wall motion. Within this field the topological Hall effect, which originates from scalar spin chirality, is an example of inter-band quantum coherence induced by real-space inhomogeneous magnetic textures, and its magnitude depends on the winding number and chiral spin features that establish the total topological charge of the system. Remarkably, in the two decades since its discovery, there has been no research on the quantum correction to the topological Hall effect. Here we will show that, unlike the ordinary Hall effect, the inhomogeneous magnetization arising from the spin texture will give additional scattering terms in the kinetic equation, which result in a quantum correction to the topological Hall resistivity. We focus on two-dimensional systems, where weak localization is strongest, and determine the complicated gradient corrections to the Cooperon and kinetic equation. Whereas the weak localization correction to the topological Hall effect is not large in currently known materials, we show that it is experimentally observable in dilute magnetic semiconductors. Our theoretical results will stimulate experiments on the topological Hall effect and fill the theoretical knowledge gap on weak localization corrections to transverse transport.

Weak localization in disordered spin-1 chiral fermions

We theoretically investigate the quantum interference theory of magnetotransport of the three-component or spin-1 chiral fermions, which possess two linear Dirac bands and a flat band. For isotropic scalar impurities, the correction of conductivity from the coherent backscatter and non-coherent backscatter contributions cancel out in the intravalley scattering, leading to a weak localization correction to the Drude conductivity from the intervalley scattering. For the anisotropic impurities, the above cancelation is removed, we find the approximative quantum interference conductivity in the weak anisotropy case. The contributions from the chiral anomaly and classical Lorentz force are also discussed. Our work reveals some intriguing and detectable transport signatures of the novel spin-1 chiral fermions.

Geometrically induced localization of flexural waves on thin warped physical membranes.

We consider the propagation of flexural waves across a nearly flat, thin membrane, whose stress-free state is curved. The stress-free configuration is specified by a quenched height field, whose Fourier components are drawn from a Gaussian distribution with power-law variance. Gaussian curvature couples the in-plane stretching to out-of-plane bending. Integrating out the faster stretching modes yields a wave equation for undulations in the presence of an effective random potential, determined purely by geometry. We show that at long times and lengths, the undulation intensity obeys a diffusion equation. The diffusion coefficient is found to be frequency dependent and sensitive to the quenched height field distribution. Finally, we consider the effect of coherent backscattering corrections, yielding a weak localization correction that decreases the diffusion coefficient proportional to the logarithm of the system size, and induces a localization transition at large amplitude of the quenched height field. The localization transition is confirmed via a self-consistent extension to the strong disorder regime.

Full spin-orbit coefficient in III-V semiconductor wires based on the anisotropy of weak localization under in-plane magnetic field

Because of the one-dimensional confinement of electron momentum in narrow semiconductor wires, spin relaxation is suppressed irrespective of the presence of spin-orbit (SO) interaction. In quantum transport, weak localization corrections to conductivity are reflected as suppressed spin relaxation, which makes quantification of the SO strength difficult because quantum correction theory requires weak antilocalization when evaluating SO coefficients. Narrow wires with strong SO interaction are potential platform for Majorana particles and parafermions for topological electronics and quantum computation, so revealing the SO strength in semiconductor wire structures is beneficial. Herein, we present quantification of the full SO coefficient under weak localization in InGaAs-based narrow wires. Using anisotropic weak localization observed under an in-plane external magnetic field with various orientations, one can ascertain the relative ratio between Rashba ($\ensuremath{\alpha}$) and linear Dresselhaus (${\ensuremath{\beta}}_{1}$) SO coefficients with no fitting. Furthermore, we find that widely tuning the potential profile of the quantum well through the top gate can expose a Rashba-predominant region in magnetoconductance, where the $\ensuremath{\alpha}$ value can be extracted reliably from two-dimensional quantum correction theory. Finally, we quantify the full SO coefficients including Rashba, linear Dresselhaus, and cubic Dresselhaus terms in the wire.

Weak Localization Correction to Linear Absorption in Conventional Superconductors

The weak localization effect on a linear absorption spectrum is investigated for disordered s-wave superconductors. The vertex correction is incorporated into the response function in a way that is consistent with the weak localization correction to a one-particle spectrum. The effect of interactions between electrons enhanced by their diffusive motion makes a major contribution to the correction term. Numerical calculations show that the weak localization effect suppresses the absorption by the excitation across the gap to a greater extent than that by thermal excitation, which is a similar tendency to the results of experiments. The ratio of the linear absorption with vertex corrections to that without the corrections shows a large variation at the frequency that is around twice the energy of the superconducting gap. This behavior represents a relationship between the weak localization effect on the linear absorption and that on the one-particle spectrum.

High Positive MR and Energy Band Structure of RuSb2.

A high positive magnetoresistance (MR), 78%, is observed at 2 K on the ab plane of the diamagnetic RuSb2+ semiconductor. On the ac plane, MR is 44% at 2 K, and about 7% at 300 K. MR at different temperatures do not follow the Kohler’s rule. It suggests that the multiband effect plays a role on the carrier transportation. RuSb2+ is a semiconductor with both positive and negative carriers. The quantum interference effect with the weak localization correction lies behind the high positive MR at low temperature. Judged from the ultraviolet–visible spectra, it has a direct band gap of 1.29 eV. The valence band is 0.39 eV below the Fermi energy. The schematic energy band structure is proposed based on experimental results.

Weak localization corrections to the thermal conductivity in s -wave superconductors

We study the thermal conductivity in disordered $s$-wave superconductors. Expanding on previous works for normal metals, we develop a formalism that tackles particle diffusion as well as the weak localization (WL) and weak anti-localization (WAL) effects. Using a Green's functions diagrammatic technique, which takes into account the superconducting nature of the system by working in Nambu space, we identify the system's low-energy modes, the diffuson and the Cooperon. The time scales that characterize the diffusive regime are energy dependent; this is in contrast with the the normal state, where the relevant time scale is the mean free time $\tau_e$, independent of energy. The energy dependence introduces a novel energy scale $\varepsilon_*$, which in disordered superconductors ($\tau_e \Delta\ll 1$, with $\Delta$ the gap) is given by $\varepsilon_* = \sqrt{\Delta/\tau_e}$. From the diffusive behavior of the low-energy modes, we obtain the WL correction to the thermal conductivity. We give explicitly expressions in two dimensions. We determine the regimes in which the correction depends explicitly on $\varepsilon_*$ and propose an optimal regime to verify our results in an experiment.

Parquet dual fermion approach for the Falicov-Kimball model

In the Falicov-Kimball model, a model for (annealed) disorder, we expect weak localization corrections to the optical conductivity. However, we get such weak localization effects only when employing a $pp$-ladder approximation in the dual fermion approach. In the full parquet approach, these $pp$ contributions are suppressed by $ph$-reducible diagrams. For the optical conductivity, we find that the $\overline{ph}$ channel yields the main contribution, even in the region where weak localization in the $pp$ ladder was indicated.

Boltzmann transport theory for metal-insulator transitions

Introducing both weak-localization corrections and electron-electron interactions of elastic scattering channels into the framework of Boltzmann transport theory, we construct a Wolfle–Vollhardt self-consistent equation for the diffusion coefficient and investigate metal-insulator transitions at finite temperatures. Here, we focus on two dimensional metal-insulator transitions and compare them with those in three dimensions, considering the diffusion constant as a function of both disorder strength and bath temperature. As a result, we find that renormalization of the diffusion constant in two dimensions strongly depends on the bare value of the dephasing rate, introduced to regularize the IR divergence of the weak-localization kernel in two dimensions while the renormalized diffusion coefficient does not rely on the bare value of the dephasing rate much in three dimensions, free from the IR divergence. This result implies that the role of dephasing in renormalization of the diffusion constant is more complex in two dimensions than that in three dimensions, where higher-order interaction corrections for the dephasing rate should be taken into account in the framework of the Boltzmann transport theory.

Disentangling spin-orbit coupling and local magnetism in a quasi-two-dimensional electron system

Quantum interference between time-reversed electron paths in two dimensions (2D) leads to the well-known weak localization correction to resistance. If spin-orbit coupling is present, the resistance correction is negative, termed weak antilocalization (WAL). Here, we report the observation of WAL coexisting with exchange coupling between itinerant electrons and localized magnetic moments. We use low-temperature magnetotransport measurements to investigate the quasi-two-dimensional, high-electron-density interface formed between ${\mathrm{SrTiO}}_{3}$ and the antiferromagnetic Mott insulator ${\mathrm{NdTiO}}_{3}$. As the magnetic field angle is gradually tilted away from the sample normal, the data reveal the interplay between strong $k$-cubic Rashba-type spin-orbit coupling and a substantial magnetic exchange interaction from local magnetic regions. The resulting quantum corrections to the conduction are in excellent agreement with existing models and allow sensitive determination of the small magnetic moments ($22\phantom{\rule{0.16em}{0ex}}{\ensuremath{\mu}}_{B}$ on average), their magnetic anisotropy, and mutual coupling strength. This effect is expected to arise in other 2D magnetic materials systems.

Mesoscopic effects in the heat conductance of superconducting-normal-superconducting and normal-superconducting junctions

We study the heat conductance of hybrid superconducting junctions. Our analysis involves single-channel junctions with arbitrary transmission as well as diffusive connectors and shows the influence of the superconducting gaps and phases of the contacts on the heat conductance. If the junction is diffusive, these effects are completely quenched on average, however, we find that their influence persists in weak-localization corrections and conductance fluctuations. While these statistical properties strongly deviate from the well-known analogues for the charge conductance, we demonstrate that the heat conductance fluctuations maintain a close to universal behavior. We find a generalized Wiedemann-Franz law for Josephson junctions with equal gaps and vanishing phase difference.

Closed-Form Weak Localization Magnetoconductivity in Quantum Wells with Arbitrary Rashba and Dresselhaus Spin-Orbit Interactions.

We derive a closed-form expression for the weak localization (WL) corrections to the magnetoconductivity of a 2D electron system with arbitrary Rashba α and Dresselhaus β (linear) and β_{3} (cubic) spin-orbit interaction couplings, in a perpendicular magnetic field geometry. In a system of reference with an in-plane z[over ^] axis chosen as the high spin-symmetry direction at α=β, we formulate a new algorithm to calculate the three independent contributions that lead to WL. The antilocalization is counterbalanced by the term associated with the spin relaxation along z[over ^], dependent only on α-β. The other term is generated by two identical scattering modes characterized by spin-relaxation rates which are explicit functions of the orientation of the scattered momentum. Excellent agreement is found with data from GaAs quantum wells, where, in particular, our theory correctly captures the shift of the minima of the WL curves as a function of α/β. This suggests that the anisotropy of the effective spin-relaxation rates is fundamental to understanding the effect of the spin-orbit coupling in transport.

Nonequilibrium Green's function study of magnetoconductance features and oscillations in clean and disordered nanowires

We explore various aspects of magneto-conductance oscillations in semiconductor nanowires, developing quantum transport models based on the non-equilibrium Green's function formalism. In the clean case, Aharonov-Bohm (AB - h/e) oscillations are found to be dominant, contingent upon the surface confinement of electrons in the nanowire. We also numerically study disordered nanowires of finite length, bridging a gap in the existing literature. By varying the nanowire length and disorder strength, we identify the transition where Al'tshuler-Aronov-Spivak (AAS - h/2e) oscillations start dominating, noting the effects of considering an open system. Moreover, we demonstrate how the relative magnitudes of the scattering length and the device dimensions govern the relative dominance of these harmonics with energy, revealing that the AAS oscillations emerge and start dominating from the center of the band, much higher in energy than the conduction band-edge. We also show the ways of suppressing the oscillatory components (AB and AAS) to observe the non-oscillatory weak localization corrections, noting the interplay of scattering, incoherence/dephasing, the geometry of electronic distribution, and orientation of magnetic field. This is followed by a study of surface roughness which shows contrasting effects depending on its strength and type, ranging from magnetic depopulation to strong AAS oscillations. Subsequently, we show that dephasing causes a progressive degradation of the higher harmonics, explaining the re-emergence of the AB component even in long and disordered nanowires. Lastly, we show that our model qualitatively reproduces the experimental magneto-conductance spectrum in [Holloway et al, PRB 91, 045422 (2015)] reasonably well while demonstrating the necessity of spatial-correlations in the disorder potential, and dephasing.

Boltzmann transport theory for many-body localization

We investigate a many-body localization transition based on a Boltzmann transport theory. Introducing weak localization corrections into a Boltzmann equation, Hershfield and Ambegaokar re-derived the Wolfle-Vollhardt self-consistent equation for the diffusion coefficient [Phys. Rev. B {\bf 34}, 2147 (1986)]. We generalize this Boltzmann equation framework, introducing electron-electron interactions into the Hershfield-Ambegaokar Boltzmann transport theory based on the study of Zala-Narozhny-Aleiner [Phys. Rev. B {\bf 64}, 214204 (2001)]. Here, not only Altshuler-Aronov corrections but also dephasing effects are taken into account. As a result, we obtain a self-consistent equation for the diffusion coefficient in terms of the disorder strength and temperature, which extends the Wolfle-Vollhardt self-consistent equation in the presence of electron correlations. Solving our self-consistent equation numerically, we find a many-body localization insulator-metal transition, where a metallic phase appears from dephasing effects dominantly instead of renormalization effects at high temperatures. Although this mechanism is consistent with that of recent seminal papers [Ann. Phys. (N. Y). {\bf 321}, 1126 (2006); Phys. Rev. Lett. {\bf 95}, 206603 (2005)], we find that our three-dimensional metal-insulator transition belongs to the first order transition, which differs from the Anderson metal-insulator transition described by the Wolfle-Vollhardt self-consistent theory. We speculate that a bimodal distribution function for the diffusion coefficient is responsible for this first order phase transition.

Josephson currents in chaotic quantum dots

We study theoretically the Josephson current-phase relationship in a chaotic quantum dot coupled to superconductors by ballistic contacts. In this regime, strong proximity effect induces superconductivity in the quantum dot that leads to a significant modification in the electron density of states and formation of multiple sub-gaps. The magnitude of the resulting supercurrent depends on the phase difference of the superconducting order parameter in the leads and shows strongly anharmonic skewed behavior. We find that when the Thouless energy on the dot exceeds the superconducting energy gap, the second harmonic of the supercurrent becomes comparable in magnitude to the first harmonic. To address these effects on the technical level, we use the nonlinear $\sigma$-model Keldysh formalism in the framework of the circuit theory to compute dependence of the density of states, Josephson energy, and current on the superconducting phases in the leads. We analyze how these quantities change as a function of the Thouless energy and the superconducting gap. Finally, we briefly discuss sub-gap tail states, mesoscopic supercurrent fluctuations, weak localization correction, and also touch on anharmonicity of gatemon qubits with quantum dot Josephson junctions.

Negative magnetothermal resistance in a disordered two-dimensional antiferromagnet

We demonstrate that a weak external magnetic field can induce negative magneto-thermal-resistance for magnons in a disordered two-dimensional antiferromagnet. We study the main effect of a weak external magnetic field on the longitudinal thermal conductivity, $\kappa_{xx}$, for a disordered antiferromagnet using the weak-localization theory for magnons. We show that the weak-localization correction term of $\kappa_{xx}$ positively increases with increasing the magnetic field parallel to the ordered spins. Since this increase corresponds to a decrease of the thermal resistivity, this phenomenon is negative magneto-thermal-resistance for magnons. This negative magneto-thermal-resistance and the weak localization of magnons will be used to control the magnon thermal current in antiferromagnetic spintronics devices. We also discuss several implications for further experimental and theoretical studies for disordered magnets.

Stability of charged density waves in InAs nanowires in an external magnetic field

We report on magnetotransport measurements at K in a high-quality InAs nanowire ( kΩ) in the presence of the charged tip of an atomic force microscope serving as a mobile gate. We demonstrate the crucial role of the external magnetic field on the amplitude of the charge density waves with a wavelength of 0.8 μm. The observed suppression rate of their amplitude is similar or slightly higher than the one for weak localization correction in our investigated InAs nanowire.

Electron transport in nodal-line semimetals

We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the screened potential $\phi$ decaying as $\phi \propto 1/r^2$ over a wide interval of distances $r$. This unusual screening gives rise to a rich variety of conduction regimes as a function of temperature, doping level and impurity concentration. In particular, nodal-line semimetals exhibit a diverging mobility $\propto 1/|\mu|$ in the limit of vanishing chemical potential $\mu$, a linearly-increasing dependence of the conductivity on temperature, $\sigma \propto T$, and a large weak-localization correction with a strongly anisotropic dependence on magnetic field.

Temperature dependence of universal conductance fluctuation due to development of weak localization in graphene

The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this behavior can be attributed to the decrease in the inelastic scattering (dephasing) rate, which enhances the weak localization (WL) correction to resistivity. Following a previous report that explained the relationship between the universal conductance fluctuation (UCF) and WL regarding the gate voltage dependence (Terasawa et al., 2017) [19], we propose that the temperature dependence of the UCF in monolayer graphene can be interpreted by the WL theory.