Silicon photonics—the fabrication of optical components and systems in silicon chips by leveraging cost-effective silicon integrated circuit manufacturing—has seen considerable activity over the last few years, with major breakthroughs in modulation, fiber-to-chip coupling, and wavelength-division multiplexing filters. These components have been integrated into complex systems together with custom designed CMOS circuitry.1, 2 On the other hand, the generation and detection of light remains a much more challenging problem. Silicon, being an indirect bandgap semiconductor, does not provide an efficient platform for light generation, and its vanishing absorption coefficient at wavelengths longer than 1μm hinders its use for photodetection in the near-infrared optical communication wavelengths (1.3 and 1.55μm). Given the importance of an integrated source for a CMOS optical transceiver, several attempts have beenmade to enhance the light emission properties of silicon, but even the best results lag behind the performance of a typical III-V laser source.When it comes to near-infrared photodetection, however, high-performance CMOS-based devices relying on the high absorption coefficient of germanium have been achieved.3 Today, optical communication receivers use high-performance, discrete, InGaAs photodiodes, with several drawbacks arising from the hybrid nature of the technology. The full receiver chain cannot be tested waferscale, which results in yield fall-out after complete assembly. Furthermore, these devices are difficult to scale to multiple channel applications, as each channel requires a separate, expensive, and large component. Significant financial benefits may be achieved through the use of embedded photodetectors.4 Embedding the photodetectors directly on the wafer will eliminate the costs associated with the assembly and testing of multiple components. This technology will allow a very large number of photodetectors to be grown directly Figure 1. A typical germanium-on-silicon waveguide photodetector. SOI: silicon on insulator.
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