A large number of papers have been written which describe various aspects of the GaAs photocathode, but very little has been published on the application of GaAs to image intensifiers. The little that has been published suggests that GaAs photocathode image intensifiers (third generation) will prove a significant improvement on existing tubes. The published data does very little to indicate whether the third generation has reached the limits of development or whether further improvements can be anticipated. This paper draws together the relevant published experimental and theoretical data and compares this with new experimental data from current developmental samples of third generation intensifiers. The main tube parameters, sensitivity, resolution, noise and life are examined in turn against this background information in an attempt to define the known physical and technological limitations to performance. This paper therefore explores the upper limits of the individual performance parameters of the third generation wafer tube, and explains some of the trade-offs between the various parameters. Finally, the limiting performance is compared with existing second and third generation devices, in an attempt to fit the third generation image intensifier into the general night vision background.
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