Current-voltage Characteristics Research Articles

Self-doped conducting polyaniline bearing phosphonic acid as a hole transport layer in organic photovoltaics

A self-doped conducting polyaniline was used as a hole transport layer (HTL) in organic photovoltaics (OPVs) [indium tin oxide/HTL/zinc-phthalocyanine/C70/bathocuproine/Al]. This polyaniline was characterized by phosphonic acid neutralized with pyridine (PMAP:Py). The current–voltage characteristics were evaluated and were comparable to those of the devices using a conventional hole transport material, poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate) (PEDOT:PSS). PMAP:Py-based OPVs stored in both nitrogen and ambient atmosphere had a longer lifetime than PEDOT:PSS-based ones.

Comprehensive analysis of the performance of a microfluidic photoelectrochemical solar cell with heat exchanger

A dye-sensitized solar cell (DSSC) is a type of photoelectrochemical cell that converts sunlight directly into electricity using a photoanode with a dye-sensitized, nonporous semiconductor layer. This study investigates the impact of integrating microfluidic capabilities into DSSCs, resulting in a flow-cell configuration that introduces new electrical characteristics without compromising its performance. The primary goal of the work was to define and determine the values of heat, mass, and charge transport resistances, and to explore their relationships with the cell’s current–voltage characteristics, temperature, light intensity, and spectra. We employed both experimental methods and computational fluid dynamics using the Lattice-Boltzmann solver to analyze the cell’s dynamics. A novel multilayered microfluidic DSSC (µDSSC) was designed, featuring an innovative “gapless” configuration with a photoactive surface area exceeding 7 cm2, integrated directly with a microfluidic heat exchanger. This configuration allowed the µDSSC to achieve a power conversion efficiency (PCE) of at least 6 % under standard test conditions, with a fill factor reaching up to 68 %. By gradually covering the cell surface, the impact of series resistance (Rs) on PCE was minimized, enabling a maximum PCE of 19–22 %. A new integral definition of the fill factor (IFF) was proposed, which accurately describes the performance of cells constrained by ion mass transport resistance. For the gapless µDSSC, the IFF ranged from 58 % to 88 %. Additionally, we introduced a maximum cell efficiency (MCE) parameter to represent the cell’s efficiency at the theoretical limit of Rs = 0, determined to be 20.7 % for the gapless µDSSC. This MCE value is specific to the cell and is independent of the illuminated surface area and incident light intensity. The thermal efficiency of µDSSC cells is generally limited by heat conduction through the multilayer structure, but at practical cell surface temperatures of 50–80 °C, this limitation is 3 to 6 times less significant than the limitation imposed by the maximum solar energy flux reaching the cell surface. The integration of microchannels into the cell led to a 58 % reduction in hydraulic resistance along the main flow direction. While electrolyte flow typically reduces efficiency in wide-gap DSSCs, the gapless configuration minimizes mass transport resistance, ensuring that fluid flow does not adversely affect the performance of gapless µDSSCs.

Organic Heterostructures with Dendrimer Based Mixed Layer for Electronic Applications

Recently, much research has focused on the search for new mixed donor–acceptor layers for applications in organic electronics. Organic heterostructures with layers based on the generation 1 poly(propylene thiophenoimine) (G1PPT) dendrimer, N,N′-diisopropylnaphthalene diimide (MNDI), and a combination of the two were prepared and their electrical properties were investigated. Single layers of G1PPT and MNDI and a mixed layer (G1PPT:MNDI) were obtained via spin coating on quartz glass, silicon, and glass/ITO substrates, using chloroform as a solvent. The absorption mechanism was investigated, the degree of disorder was estimated, and the emission properties of the layers were highlighted using spectroscopic methods (UV–Vis transmission and photoluminescence). The effects of the concentration and surface topographical particularities on the properties of the layers were analyzed via atomic force microscopy. All of the heterostructures realized with ITO and Au electrodes showed good conduction, with currents of the order of mA. Additionally, the heterostructure with a mixed layer exhibited asymmetry in the current–voltage curve between forward and reverse polarization in the lower range of the applied voltages, which was more significant at increased concentrations and could be correlated with rectifier diode behavior. Consequently, the mixed-layer generation 1 poly(propylene thiophenoimine) dendrimer with N,N′-diisopropylnaphthalene diimide can be considered promising for electronic applications.

The E × B magnetized plasma device (EMPD).

A plasma device has been created to study dynamic plasma coupling in an E × B-drifting magnetized plasma. The E × B magnetized plasma device is a 1.2m diameter by 2m long cylindrical chamber with two sets of Helmholtz coils in a mirror configuration. A steady-state axial hollow cathode source injects a plasma discharge in electrical contact with a floating conductor at a range that forms a unique axisymmetric equipotential surface or Virtual Cathode Lightsaber (VCL). The VCL generates two plasma populations streaming relative to one another providing a suitable environment for the investigation of dynamic plasma coupling. The plasma density, radial electric field, and plasma rotational velocity outside the VCL are shown to be influenced by the current-voltage relationship of the cathode and applied magnetic field strength. A basic characterization of the device and plasma environment is presented with an emphasis on diagnostics systems and the analytical techniques utilized.

CATHODIC AND ANODIC PLASMA ELECTROLYSIS ON NITRATE SYNTHESIS

Nitrogen fixation using plasma electrolysis is an alternative in the production of liquid nitrate fertilizer which is safe for the environment because it does not produce emissions that pollute the environment. The effectiveness of nitrate production is shown from the position of plasma formation at cathodic and anodic levels. This study aims to analyze the comparison of cathodic and anodic plasma electrolysis levels in producing nitrate. Current-voltage characterization is carried out to determine the position of plasma formation. The glow discharge of the cathodic plasma is achieved after the critical voltage (280 V) is lower than that of the anodic plasma (650 V). Measurement of emission intensity using electron spin resonance to determine reactive species that play a role in the formation of nitrate in cathodic and anodic plasma. Nitrate formation is influenced by reactive species in the form of N, N2*, N2+, •OH, •H and •O, especially reactive species of nitrogen and •OH are needed to form nitrate both from the NO pathway (anodic plasma) and from the ammonia pathway (cathodic plasma). The results of this study showed that anodic plasma electrolysis was more effective for nitrate synthesis. Nitrate produced from anodic plasma is 1889 mg L-1, greater than cathodic plasma as much as 213 mg L-1.

Bismuth oxyiodide as a highly efficient room temperature NOx gas sensor: Role of surface orientations on sensing performance

In the pursuit of developing fast and reliable gas sensors, a new ternary oxide semiconductor, a bismuth oxyiodide (BiOI)-based sensing material, has been reported with desirable adsorption energy, short recovery time, and high sensitivity and selectivity for detecting nitrogen oxide mixtures (NOx, typically NO and NO2). The structural, electronic, and transport properties of both (001) and (012) planes of BiOI surfaces upon the adsorption of six environmentally relevant gases (NO, NO2, SO2, SO3, O2, and H2O) are systematically explored using a combination of density functional theory (DFT) and non-equilibrium Green's function (NEGF) methods. The results indicate that BiOI (001) exhibits weak interaction with these gases, with the highest adsorption energy observed for NO. In contrast, the BiOI (012) surface shows enhanced adsorption stability for these gases, particularly acceptable strong adsorption to NO2, indicating its promising capability for detecting these gases with high specificity. Moreover, it demonstrates the most intense chemisorption for SO3, suggesting it to be a reliable SO3 adsorbent/cleaner. The obtained transport characteristics, including current-voltage (I-V) and resistance-voltage (R-V) curves, further highlight the higher selectivity of the BiOI (001) device towards NO and the BiOI (012) device towards NO2 against the other gases. Furthermore, the transmission spectra analyses reveal that the BiOI-based sensor can electrically discriminate the target gas molecules from other considered gas molecules. Besides, the practical application possibilities of both orientations are explored by estimating their recovery time, and the results show that the BiOI sensor has excellent recovery times at room temperature (NO/BiOI (001) = 0.158 ns, and NO2/BiOI (012) = 3.89 s), highlighting its potential as an ideal reversible gas-sensing material for detecting NOx gases.

Interface Collaborative Strategy for High Mobility Organic Single‐Crystal Field‐Effect Transistors with Ideal Current–Voltage Curves

AbstractThe key roles of electrode/semiconductor and semiconductor/dielectric interfaces play in the ideality of organic field‐effect transistors (OFETs) by traditional device preparation technologies are not yet fully understood, which severely limits progress in the design of molecules, the understanding of transport mechanisms, and the circuit applications of OFETs. Herein, at a quantitative level, the origin of nonideal current–voltage (I–V) curves and possibly overestimated mobility in single‐crystal OFETs is revealed, including contact resistance (Rc), charge trapping, and scattering at interfaces of devices. Impressively, an efficient interface collaborative strategy, which consists of transferred “doped” electrodes with tunable contact “doping” localized regions at the source‐drain contacts and polymer‐modified SiO2 with suitable surface polarity (γsp) is further demonstrated that have great advantages in the construction of ideal high mobility devices. Also, an interesting double‐edged sword effect of γsp of dielectric on the ideality of OFETs is observed. The dielectric with a lower γsp can result in higher mobility, while too low γsp would degrade the device ideality due to significant effect of charge scattering. The findings not only provide new perspectives and strategies to construct ideal OFETs but also offer useful guidance to correctly evaluate organic semiconductor materials.

Advancements in CIGS/ZnS heterojunction solar cells: Experimental and numerical analysis

This study presents a comprehensive experimental investigation conducted on a CIGS-based solar cell incorporating a ZnS buffer layer. The primary objective was to determine key parameters of the CIGS/ZnS heterojunction, including parasitic resistances (Rs and Rsh), ideality factor (n), and barrier height (ϕB), using experimental current-voltage (I-V) characteristics over a temperature range of 150 K to 300 K under dark conditions. The heterojunction was modelled using a single-diode electrical circuit that accounted for parasitic resistances. Two methods were employed for parameter determination: direct analysis of the (I-V) curves and Cheung's method. Additionally, the charge transport mechanism within the heterojunction is investigated and discussed. Furthermore, the performance of the Al:ZnO/i:ZnO/ZnS/CIGS/Mo solar cell was assessed using the SCAPS-1D simulator, demonstrating an initial solar energy conversion efficiency of 15.01 %. To enhance this efficiency, a hole transport layer (HTL) was integrated between the back electrode and the absorber layer. Extensive studies were conducted to optimize the thickness and doping density of the HTL, including a comparative analysis of different materials used as HTLs. These optimizations resulted in a significant increase in conversion efficiency, reaching up to 28.68 %.

Energy consumption model of flow-through electrolyzer considering mass transfer overpotential for hydrogen production from alkaline water splitting

Flow-through electrolyzer can improve the efficiency of hydrogen production from alkaline water splitting and determining the optimal electrolyte velocity through electrode pores is crucial for reducing energy consumption. In this study, an energy consumption model of flow-through electrolyzer considering mass transfer overpotential (Emass) has been developed. The model of Emass due to gas hold-up (ϕ) in the electrolyzer accounts for the density, viscosity, surface tension, linear velocity, and current density. The model-predicted value is in good agreement with the experimental results, which indicated that the increase of velocity effectively reduces ϕ and Emass. Then, Voltage-Current curve models combining reversible voltage, activation overpotential, ohmic overpotential, and Emass are developed. Based on this, an energy consumption model, combining both consumption from electrolyzer and pumps, is established to evaluate the overall energy consumption of hydrogen production. It can be calculated the Emass at 400 mA cm−2, 6 M KOH, 353 K can be reduced from 0.363 V to 0.048 V if the circulation velocity rises from 0.001 m s−1 to 0.1 m s−1. The model predicts that total energy consumption is 4.36 kWh Nm−3 with energy consumption for pump being 0.02 kWh Nm−3 at 400 mA cm−2 and 0.063 m s−1.

Annealing Effect on Structural, Optical and Electrophysical Properties of ZnSe Nanocrystals Synthesized into SiO2/Si Ion Track Template.

We report the results of synthesis of zinc selenide (ZnSe) nanocrystals into SiO2/Si track templates formed by irradiation with 200 MeV Xe ions up to a fluence of 107 ions/cm2. Zinc selenide nanocrystals were obtained by chemical deposition from the alkaline aqueous solution. Scanning electron microscopy, X-ray diffractometry, Raman and photoluminescence spectroscopy, and electrical measurements were used for characterization of synthesized ZnSe/SiO2nanoporous/Si nanocomposites. XRD data for as-deposited precipitates revealed the formation of ZnSe nanocrystals with cubic crystal structure, spatial syngony F-43m (216). According to non-empirical calculations using GGA-PBE and HSE06 functionals, ZnSe crystal is a direct-zone crystal with a minimum bandgap width of 2.36 eV and anisotropic electronic distribution. It was found that a thermal treatment of synthesized nanocomposites at 800 °C results in an increase in ZnSe nanocrystallites size as well as an increase in emission intensity of created precipitates in a broad UV-VIS spectra range. However, vacuum conditions of annealing still do not completely prevent the oxidation of zinc selenide, and a formation of hexagonal ZnO phase is registered in the annealed samples. The current-voltage characteristics of the synthesized nanocomposites proved to have n-type conductivity, as well as increased conductivity after annealing.

Field enhancement induced by surface defects in two-dimensional ReSe2 field emitters.

The field emission properties of rhenium diselenide (ReSe2) nanosheets on Si/SiO2 substrates, obtained through mechanical exfoliation, have been investigated. The n-type conduction was confirmed by using nano-manipulated tungsten probes inside a scanning electrode microscope to directly contact the ReSe2 flake in back-gated field effect transistor configuration, avoiding any lithographic process. By performing a finite element electrostatic simulation of the electric field, it is demonstrated that the use of a tungsten probe as anode, at a controlled distance from the ReSe2 emitter surface, allows the collection of emitted electrons from a reduced area that furtherly decreases by reducing the tip-sample distance, i.e. allowing a local characterization of the field emission properties. Experimentally, it is shown that the turn-on voltage can be linearly reduced by reducing the cathode-anode separation distance. By comparing the measured current-voltage characteristics with the numerical simulations, it is also shown that the effective field enhancement on the emitter surface is larger than expected because of surface defects. Finally, it is confirmed that ReSe2 nanosheets are suitable field emitters with high time stability and low current fluctuations.

Investigating the role of Ag-doped ZnO thin films in UV photodetectors produced via laser assisted chemical bath growth technique

This study introduces the innovative fabrication of Ag-doped ZnO thin films (AgxZnO(100−x) TFs) with varying silver (Ag) concentrations (x) of 0.5, 1.0, 1.5, and 2.0 at% on glass substrates using a simple and cost-effective method known as laser-assisted chemical bath growth (LACBG). This process aims to create metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors. A continuous wave semiconductor laser with a 444.5 nm wavelength, 5 W power, and 6 min irradiation time was employed to synthesize high-quality Ag-doped ZnO TFs on the glass substrate. Ag electrodes were utilized as Schottky contacts to form MSM UV photodetectors. Structural and morphological analyses conducted using XRD and SEM revealed vertically aligned nanorods and nanoflowers with a high c-axis orientation and hexagonal wurtzite facets, while EDX confirmed Ag incorporation into the ZnO lattice. The UV–Visible absorbance spectra indicated a decrease in bandgap from 3.28 to 2.84 eV with increased Ag content. The current-voltage (I–V) characteristics of the Ag-doped ZnO TFs UV photodetector showed significantly enhanced conductivity at a 2.0 at% concentration level, achieving a responsivity of 10.78 A/W, an external quantum efficiency of 34.67 % at −3 V bias voltage. Finally, the modified device exhibited a sensitivity of 14661.9 %, a gain of 147.62, and a detectivity of 2.25 ×107 Jones, demonstrating its suitability for optoelectronic applications.

Analysis and experimental verification of two types of three‐coil MCR‐WPT system with constant current and constant voltage characteristics

Analysis and experimental verification of two types of three‐coil MCR‐WPT system with constant current and constant voltage characteristics

Effect of nitrogen content on the structure and superconductivity of reactive sputtered NbTiN thin films

In this research, we have studied the structural and electrical properties of NbTiN films deposited on MgO and SiO2/Si substrates by reactive dc sputtering. The formation of stoichiometric NbTiN is very sensitive to N concentration and can be easily adjusted by changing the discharge current and Ar: N2 ratio along the current–voltage curves (IVCs) of the NbTi target. Excessive or insufficient N concentration in NbTiN leads to sublattice expansion or distortion, resulting in a decrease in critical temperature T c. At Ar: N2 ratio of 30:4 and discharge current of 2.2 A, T c as high as 15.8 K and 15.3 K has been obtained for 200 nm thick NbTiN/MgO and NbTiN/SiO2/Si samples, respectively. In addition, the critical density J c of the 4 μm-wide and 7 nm-thick NbTiN film grown on MgO substrate at 2 K reaches 19.2 MA cm−2, which is approximately twice as high as the 10.9 MA cm−2 of the same-sized NbTiN film grown on SiO2/Si substrate. Therefore, by further fine-tuning the N concentration in combination with the IVCs of the target, high-quality stoichiometric NbTiN can be obtained.

Efficient Electrochemical Reduction through Flow Cells Using Spherical-Polymer Based Carbon Supported Catalysts as Fixed-Bed Electrode

The transition to economically friendly feedstocks and the electrification of chemical synthesis reactions gained much attention in the recent years. To be able to compete with the conventional processes, it is crucial not only to concentrate on the electrochemical reactions itself but also to constantly improve the reactor concepts. A vast variety of designs are imaginable and already well-described – from a simple, undivided beaker cell setup to a divided flow cell with separate electrolytes at cathode and anode. [1] As electrode material not only flat metal electrodes are studied, but also the concept of using carbon supported metal nanoparticles is well-known to employ high dispersion to lower the total amount of required metal. [2,3] While there are already commercial flow reactors and electrodes available for electrosynthesis with flat standard electrodes, reactors using a fixed-bed of porous carbon with nanodispersed metals as electrode just recently started to attract attention. [4] Dealing with the pressure drop over the catalyst bed, while the electrical contact is still ensured, are key challenges for this reactor design. Spherical polymer-based carbons (SPBC) combine porous carbons properties with a high purity and especially spherical character. [5] While these advantages led already to commercial products for chromatographic applications (e.g. Carboxen®) the potential regarding flow-electrochemistry has not been leveraged. Key developments for this are reproducible synthesis procedures to deposit active metal on the SPBCs and the design of an electrochemical flow cell using these catalysts in a fixed-bed electrode configuration.The first part of this work presents the deposition of Cu through different impregnation and reduction procedures on a SPBC (Carboxen® 1032, 50 µm, Merck). The carbon was characterized by physisorption, TPD-MS, TPO, Raman and SEM. The resulting metal-impregnated carbon catalysts were additionally investigated regarding the metal loading. Using the applied impregnation and reduction parameters targeted metal loadings (3 – 20 wt%) could be well achieved. The second part focuses on the design and commissioning of a flow-cell for the application of the SPBC-supported catalysts as a fixed-bed at the cathode side. Electrochemical synthesis reactions are targeted in the cell and the reduction of 5-HMF to BHMF was chosen as the test reaction in this work. In the framework of the cell development multiple aspects not only regarding the construction but also reaction engineering issues had to be considered: material stability of the pump, fixation and pressure drop of catalyst bed, choice of electrolyte, effect of dissolved oxygen in the catholyte, optimal flow rate, reliable electrochemical protocol and selection of contact material. The latter has to be a compromise between chemical inertness and an enhanced electron transfer between the catalyst bed and the contact material (e.g. soft foil vs. hard metal). Figure 1A shows the current voltage characteristics of two possible contact materials (graphite foil, boron-doped diamond (BDD)) in the targeted electrolyte (0.5M borate buffer with 0.25M potassium chloride). Here, the graphite foil clearly shows a higher activity towards the hydrogen evolution reaction which may result in a less effective electrolysis later on. The comparison of BDD as contact material without and with a catalyst bed (Carboxen® 1032 loaded with 20 wt% Cu) resulted in a significant shift in the current voltage characteristic to lower overpotentials. Therefore, the electronic contact with the carbon bed is clearly enabled and the carbon spheres loaded with copper catalyze the reaction. Figure 1B presents the results of the test reaction with the conversion of the educt 5-HMF as well as the selectivity to the targeted product BHMF over the reaction time with BDD as contact material without and with a fixed bed of Cu/SPBC catalyst. The experiments prove full 5-HMF conversion within 23 h on stream in combination with a high selectivity towards BHMF with the catalyst bed. The mass-based productivity reaches values of up to 1.78 mmol h-1 gCu -1 and is therefore about 15 times higher compared to the use of conventional Cu foil (Pliterature = 0.11 mmol h-1 gCu -1 [6]). It is possible that due to the metal-support approach in the fixed-bed configuration, the copper is leveraged more efficiently and small amounts allow to provide sufficient metal surface area for the catalytic reaction.

Energy Efficiency of Steady DC and Half Sine Pulsed DC in the High Voltage Pre-Plasma and Plasma Alkaline Water Electrolysis

The research addresses the contrasting views on the energy efficiency of alkaline water electrolysis using the regular DC vs the pulsed DC. We compare the high voltage steady DC electrolysis with the high voltage half-wave rectified (HWR) AC (or the half Sine pulsed DC, an unexplored form of the pulsed DC) across a wide range of voltage regimes, with a particular focus on the less explored Plasma electrolysis (PE) regime. In addition, the current-voltage characteristics are mapped across the voltage regimes (NE to PE) using a novel high-voltage 3-electrode circuit, which allows better control over the working electrode potential. The experimental design considers critical parameters such as energy efficiency, Faradaic efficiency, and current density, providing a comprehensive evaluation of the regular DC Vs. the half-wave rectified AC electrolysis.Pulsed electrolysis can facilitate bubble removal and ensure timely replenishment of reactant during the low-bias phase and this is expected to diminish over potential losses due to mass transfer resistance. However, the preliminary energy efficiency assessment suggests that the regular DC is ~13% higher at 33 V bias and ~24% higher at 26.5 V bias than the half sine pulsed DC(50 Hz) electrolysis. This suggests that for these particular reaction conditions, the fluctuations in the current leading to reactive losses in the circuit and other internal losses overwhelm any enhancement in the mass transfer characteristic of pulsed electrolysis. The study also points to regimes where significant thermal decomposition results in a significant increase in the apparent Faradaic efficiency.

Impact of Silicon Dioxide Periodic Grating Structure on Electrical Properties of Graphene

Our study breaks away from the conventional focus on 3D transistor structures, aiming to explore the potential of two-dimensional materials. Graphene, a key player of two-dimensional materials, draws significant attention due to its exceptional electrical properties and chemical stability. Rather than delving into the intrinsic properties of graphene, our research focuses on examining the impact that other materials in contact with graphene have on graphene’s behavior. With a thickness of just one atomic layer, graphene's band structure is easily influenced by materials in contact with it, giving rise to the Surface Charge Transfer Doping (SCTD) effect. Our study involves the utilization of e-beam lithography to define 140 nm gratings and RIE to etch into SiO2 substrates. Subsequently, graphene is transferred onto these SiO2 gratings. Within these grating regions, in other words, graphene is supported by SiO2, while other part of the graphene is suspended. By strategically forming alternatively supported/suspended type of graphene in period of 140 nm through these gratings, our aim is to unravel the impact on the electrical characteristics of graphene along both the vertical and horizontal axes. In vertical direction, we measured contact resistance between graphene and metal; in horizontal, we measured the difference of Id-Vg curve caused by the grating structure under graphene channel. This exploration emerges from the quest to harness novel properties in the face of evolving fabrication methodologies.To have 140 nm grating, we chose e-beam lithography in defining the nano grating pattern. Initially, a clean wafer was coated with chromium, and e-beam resist Zep-520A was spin-coated and soft-baked. Subsequently, using e-beam lithography, we defined the periodic pattern. Following this, ICP-RIE was employed for dry etching of chromium, and the resist was removed. Then, ICP-RIE, with chromium as the hard mask, was utilized for dry etching of SiO2. Finally, the chromium was immersed in a chromium etchant solution, resulting in a periodic grating structure with a depth of 100nm on SiO2. This marks the completion of the first part of the fabrication process. In the second part of fabrication process, we transferred graphene, prepared through CVD, onto the SiO2 substrate with periodic gratings defined through etching. We employed optical lithography to define patterns for transmission line method (TLM) measurements. These patterns were aligned with positions defined by e-beam, ensuring that the graphene-metal contact positions precisely coincided with the underlying grating structure. Utilizing TLM, we measured the contact resistance, enabling the study of the impact of the grating on the electrical properties of graphene in the vertical direction. The fabrication flow can be schematically shown in Fig. 1.By using ELS-7000 (E-beam writer) and Oxford ICP-RIE, we successfully achieved ~140 nm grating structure on silicon dioxide with depth of 100nm, which is observed on SEM as shown in Fig. 2. Then we measured the I-V curve by 4200A-SCS and calculated contact resistance by TLM. The preliminary results of the contact resistance measurement are shown in the Fig. 3. The I-V curve shows that as the channel length increases, the total resistance increases, which is aligned with the assumptions of TLM. We can further calculate the contact resistance through the Y-axis intercept of channel length-resistance curve. With the same process, we can explore the electrical variations of graphene with graphene-metal contact resistance and current-voltage relationship. Figure 1

Fabrication of Nano-Carbon-Based Sustainable Perovskite Solar Cells

The rising need for sustainable energy solutions has fuelled considerable research into novel technologies that harness solar energy for efficient and scalable energy storage. Carbon nanotubes (CNTs) have emerged as feasible candidates for these applications due to their unique properties, such as high surface area, better electrical conductivity, and chemical stability.This report focuses on the design and fabrication of cost-effective nano-carbon-based perovskite solar cells (PSCs) and discusses their potential for clean energy generation and storage. This experimental study shows a novel technique to increase the sustainability the conventional fluorine-doped tin oxide (FTO) substrate with an Indium Tin Oxide (ITO) derived from electronic waste and incorporating nanocarbon based-graphene with solution-based techniques. This addition serves as a good basis for the ITO coating, aids charge transport in the perovskite solar cell, and promotes uniform covering maximum electrical conductivity, and transparency. Being the transparent conducting electrode, the CNTs is infused with the upcycled ITO coated glass and was included in the perovskite solar cell architecture, which replaces the traditional ITO electrode, lowering material costs, and improving the circular economy for energy storage devices, and a cleaner energy future.The ITO extraction process entails recovering indium and tin from mobile phones using an environmentally friendly and economical chemical etching process using hydrochloric acid (HCl) to remove the ITO layer. To ensure the purity and structural integrity of the ITO nanoparticles, they were rigorously characterized using X-ray diffraction, scanning electron microscopy, and energy-dispersive X-ray spectroscopy. After depositing a perovskite- CNTs precursor solution on the ITO layer glass substrate, the light-absorbing layer was annealed. Electron transport and hole-blocking layers were then deposited utilizing solution processing techniques using the PEDOT: PSS and metal electrodes were deposited to complete the device manufacturing. The current-voltage (J-V) relationship was used to compute the open-circuit voltage, short-circuit current density, fill factor (FF), and power conversion efficiency (PCE) of a solar cell. Electrical characterization allow for the calculation of solar cell performance metrics such as short-circuit current (Isc), short-circuit current density (Jsc), and open-circuit voltage (Voc). These findings imply that employing e-waste-derived ITO on graphene substrates to create high-efficiency perovskite solar cells is a realistic option. This research provides a sustainable and cost-effective method for producing high-performance perovskite solar cells by eco-friendly upcycling e-waste for ITO extraction, addressing the critical issue of e-trash management. Keywords Perovskite solar cells, CNTs, sustainable energy, energy conversion.

(Digital Presentation) Temporal Evolution of the Threshold Voltage in Organic Thin Film Memory Transistors

We present a procedure to monitor the temporal evolution of the trapped charge in floating gates of organic thin film transistors (OTFTs) based memories in dynamic regimes. The potential applications of organic semiconductors in flexible and wearable electronics and their known features such as low-temperature and solution fabrication make the OTFTs be considered as candidates also in the field of non-volatile memories. Past efforts have been devoted on the preparation and optimization of floating gates [1]. In the present work, we focus on the modelling of this kind of devices, in particular, on a model for the threshold voltage useful in dynamic experiments, such as hysteresis and transient regimes. The information extracted from the modelling and simulation of these devices can be related to technological parameters with the objective of finding a better memory design.Current-voltage curves impacted by hysteresis are usually reproduced assuming the threshold voltage to be constant or piecewise constant. Nevertheless, despite positive outcomes [2], this is not a precise approach since it does not consider the actual temporal evolution of the threshold voltage. Thus, a time dependent threshold voltage is mandatory in order to interpret hysteresis phenomena and transient experiments, which in turn can be associated to trapping and de-trapping mechanisms over time.In this work, a model that describes the evolution of the threshold voltage with the time, which is linked to the variation of the trapped charge in the channel, is proposed.The evolution of the trapped charge is described with a first-order linear differential equation with a term controlled by a time constant t, and another term, similar to the generation term in a typical continuity equation, which is proportional to the drain current flowing through the transistor channel. This model is introduced in a compact model previously developed for OTFTs that include contact effects [3–6]. The resulting model is combined with an evolutionary parameter extraction procedure, which is applied to experimental current–voltage curves taken from the literature that show both contact and hysteresis effects [7]. Figures (a) and (b) show the best fitting of our calculations (solid lines) and experimental output and transfer characteristics (symbols), respectively, of a pentacene-based organic thin film memory transistor using poly (methyl methacrylate) (PMMA) as the insulator [7]. Figures (c) and (d) show the time evolution of the threshold voltage during the experiments (a) and (b), respectively.The authors acknowledge support from the project PID2022-139586NB-44 funded by MCIN/AEI/10.13039/501100011033 and by European Union NextGenerationEU/PRTR.

Low Frequency Electronic Noise Characterization of Au-W/β-Ga2O3 Schottky Diodes

Ultra-wide bandgap (UWBG) semiconductors have attracted tremendous amount of interest for applications in high-power electronics and solar-blind UV photodetectors. In particular, β-Ga2O3 has attracted significant research attention in recent years due to its promising electrical and optical characteristics including a large bandgap, high breakdown electrical field, and large Baliga’s figure of merit compared to well-established wide-bandgap technologies such as GaN and SiC [1].Low frequency electronic noise, which is present in all electronic devices, can be used as a diagnostic tool for semiconductor material and device characterization. By studying the low frequency noise in semiconductor materials and devices, the physics associated with the noise properties of bulk and interface defects and traps can be investigated [2]. Measurement of low frequency noise is also crucial for evaluating material quality and device reliability.In this work, we investigate the forward-bias diode parameters and low-frequency electronic noise in Au-W/β-Ga2O3 Schottky barrier diodes. The Schottky contact is formed by depositing 20 nm of Tungsten (W) using dc sputtering followed by 340 nm of Gold (Au) using e-beam evaporation, and subsequent annealing [3].We first measure the I-V characteristics and extract important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance from room temperature forward-bias current-voltage characteristics. The extracted Schottky barrier height for these devices is in the range 0.7-0.8 eV and the ideality factor is approximately 1.2.We next measure the low-frequency electronic noise in Au-W/β-Ga2O3 Schottky diodes at different forward bias voltages at room temperature. We find that the current noise spectral density exhibits 1/f-type behavior for all forward bias voltages at low frequency with an exponent ranging from 0.75 to 1.15, indicating that the low frequency noise of these devices is dominated by excess (flicker) noise. No Lorentzian-shaped generation-recombination (G-R) noise is observed. At low frequencies, the shot noise contribution is found to be negligible for the values of the current in our devices, and the total noise is 1/f-limited.We also investigate the dependence of the current noise spectral density on forward bias current, revealing different relationships in different current regimes. At low currents, the noise spectral density is found to scale approximately as the square of current, whereas at high currents, the noise spectral density begins to saturate. Such noise behavior can be attributed to different noise sources dominating in different current regimes. Furthermore, using the noise figure of merit adapted for ultra-wide bandgap semiconductor devices [4], we find that the Au-W/β-Ga2O3 devices have lower noise levels compared to other emerging UWBG materials and similar noise levels as well-established technologies such as GaN.These results provide important insights into the electronic noise properties of Au-W/β-Ga2O3 Schottky diodes and show that low frequency noise characterization is an important diagnostic tool for assessing the quality and reliability of gallium oxide based wide-bandgap materials and device technologies.