We measured the internal residual stress change of ULSI copper interconnects at room temperature for 12 years to confirm the stress migration phenomenon. The residual stress decreased and voids were generated. Furthermore, we investigated the stress change results and void features obtained through physical analyses. The voids had the same features as those in the high-temperature storage. The estimated volume shrinkage agreed with the total volume of the observed voids, suggesting that void generation causes the decrease in stress. From the obtained result, we conclude that the stress migration degradation phenomenon occurs even at room temperature in the long-term storage, and that the void feature is almost identical to that in the high-temperature acceleration test.