The electronic, optical properties and work function of Ti, Mg, Be doping and adsorption on G/BP heterojunction are investigated. The Eb of G/BP doping and adsorption with Ti, Mg and Be are analyzed. The special properties of single-layer material are preserved in G/BP and band gap is opened with 50 meV. Ti, Mg and Be doping and adsorption on G/BP exhibit metallic properties and doping atoms form impurity levels near Fermi level. Except for Ti-G system, Ti doping and adsorption systems exhibit strong ferromagnetic metallicity. Doping atoms Ti, Mg, and Be all lose electrons, while G/BP gains electrons. The doping and adsorption systems have electrostatic potential difference, indicating the formation of internal electric field from BP layer to G layer. Work function of G/BP is 4.481 eV, that of Ti, Mg, and Be adsorption on G/BP decrease compared to G/BP, indicating that Ti, Mg, and Be adsorption can improve conductivity of system. The research of optical properties indicates that Ti-GB has a large absorption coefficient in visible light range.